Charge traps and interface traps in non-volatile memory device with Oxide-Nitride-Oxide structures

M. W. Seo; D. W. Kwak; W. S. Cho; C. J. Park; W. S. Kim; H. Y. Cho

doi:10.1016/j.tsf.2008.08.046

Charge traps and interface traps in non-volatile memory device with Oxide-Nitride-Oxide structures

M. W. Seo
, D. W. Kwak
, W. S. Cho
, C. J. Park
, W. S. Kim
, H. Y. Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Charge traps and interface traps in ONO (Oxide-Nitride-Oxide) structures fabricated on Si (001) substrates have been investigated. Nitride-related traps are observed to be located in the range of 2.44-2.48 eV above the valence band maximum of the nitride layer. It is demonstrated that the capacitance transient spectroscopy method could be a tool to evaluate properties of the tunneling oxide and the nitride effect on interface states.

Original language	English
Pages (from-to)	245-247
Number of pages	3
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.046
State	Published - 3 Nov 2008

Keywords

Charge trap
DLTS
Interface trap
Non-volatile memory
ONO

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10.1016/j.tsf.2008.08.046

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@article{e785893409a34d8ca5818fd990ea13e8,

title = "Charge traps and interface traps in non-volatile memory device with Oxide-Nitride-Oxide structures",

abstract = "Charge traps and interface traps in ONO (Oxide-Nitride-Oxide) structures fabricated on Si (001) substrates have been investigated. Nitride-related traps are observed to be located in the range of 2.44-2.48 eV above the valence band maximum of the nitride layer. It is demonstrated that the capacitance transient spectroscopy method could be a tool to evaluate properties of the tunneling oxide and the nitride effect on interface states.",

keywords = "Charge trap, DLTS, Interface trap, Non-volatile memory, ONO",

author = "Seo, \{M. W.\} and Kwak, \{D. W.\} and Cho, \{W. S.\} and Park, \{C. J.\} and Kim, \{W. S.\} and Cho, \{H. Y.\}",

year = "2008",

month = nov,

day = "3",

doi = "10.1016/j.tsf.2008.08.046",

language = "English",

volume = "517",

pages = "245--247",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

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TY - JOUR

T1 - Charge traps and interface traps in non-volatile memory device with Oxide-Nitride-Oxide structures

AU - Seo, M. W.

AU - Kwak, D. W.

AU - Cho, W. S.

AU - Park, C. J.

AU - Kim, W. S.

AU - Cho, H. Y.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - Charge traps and interface traps in ONO (Oxide-Nitride-Oxide) structures fabricated on Si (001) substrates have been investigated. Nitride-related traps are observed to be located in the range of 2.44-2.48 eV above the valence band maximum of the nitride layer. It is demonstrated that the capacitance transient spectroscopy method could be a tool to evaluate properties of the tunneling oxide and the nitride effect on interface states.

AB - Charge traps and interface traps in ONO (Oxide-Nitride-Oxide) structures fabricated on Si (001) substrates have been investigated. Nitride-related traps are observed to be located in the range of 2.44-2.48 eV above the valence band maximum of the nitride layer. It is demonstrated that the capacitance transient spectroscopy method could be a tool to evaluate properties of the tunneling oxide and the nitride effect on interface states.

KW - Charge trap

KW - DLTS

KW - Interface trap

KW - Non-volatile memory

KW - ONO

UR - https://www.scopus.com/pages/publications/54849406541

U2 - 10.1016/j.tsf.2008.08.046

DO - 10.1016/j.tsf.2008.08.046

M3 - Article

AN - SCOPUS:54849406541

SN - 0040-6090

VL - 517

SP - 245

EP - 247

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Charge traps and interface traps in non-volatile memory device with Oxide-Nitride-Oxide structures

Abstract

Keywords

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