Chemical bonding states of plasma nitrided high-k/Ge gate stack

C. Mahata, T. Das, S. Mallik, M. K. Hota, C. K. Maiti

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3 Scopus citations

Abstract

Chemical bonding states and electrical characteristics of a nitrided high-k/Ge gate stack formed as a compositional transition layer at TiO 2/Ge interface has been examined. Thin TiO2 have been deposited on p-type Ge (100) substrates by plasma enhanced CVD. The stoichiometry and chemical states are investigated by x-ray photoelectron spectroscopy. Depth profile XPS analyses revealed the formation of TiO xNy and GeOxNy after plasma nitridation. Peak decomposition technique was employed to identify the composition and the chemical states of the film. Stoichiometric TiO2 observed at the surface layer is found to reduce to Ti-suboxides after Ar ion sputtering.

Original languageEnglish
Pages (from-to)H167-H170
JournalElectrochemical and Solid-State Letters
Volume14
Issue number4
DOIs
StatePublished - 2011

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