Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication

Sam Dong Kim; In Seok Hwang; Hyung Moo Park; Jin Koo Rhee; Chul Woo Nam

doi:10.1116/1.1475984

Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication

Sam Dong Kim, In Seok Hwang, Hyung Moo Park, Jin Koo Rhee, Chul Woo Nam

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

23 Scopus citations

Abstract

The effects of chemical mechanical polishing using a CeO₂-based high silicon-nitride/silicon dioxide selectivity slurry on 0.18 μm complementary metal-oxide-semiconductor shallow trench isolation (STI) were investigated. It was shown that within-die and lot-to-lot variations of the remaining pad nitride thickness and the field oxide erosion were significantly reduced when high selectivity slurry (HSS) was employed for STI. Defect in the case of HSS STI polishing were minimized using an optimized in situ filtering method for the slurry. Superior gate oxide integrity was demonstrated with STI polished by in situ filtered HSS.

Original language	English
Pages (from-to)	918-923
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1116/1.1475984
State	Published - May 2002
Event	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States Duration: 1 Oct 2001 → 3 Oct 2001

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Kim, S. D., Hwang, I. S., Park, H. M., Rhee, J. K., & Nam, C. W. (2002). Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(3), 918-923. https://doi.org/10.1116/1.1475984

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title = "Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication",

abstract = "The effects of chemical mechanical polishing using a CeO2-based high silicon-nitride/silicon dioxide selectivity slurry on 0.18 μm complementary metal-oxide-semiconductor shallow trench isolation (STI) were investigated. It was shown that within-die and lot-to-lot variations of the remaining pad nitride thickness and the field oxide erosion were significantly reduced when high selectivity slurry (HSS) was employed for STI. Defect in the case of HSS STI polishing were minimized using an optimized in situ filtering method for the slurry. Superior gate oxide integrity was demonstrated with STI polished by in situ filtered HSS.",

author = "Kim, {Sam Dong} and Hwang, {In Seok} and Park, {Hyung Moo} and Rhee, {Jin Koo} and Nam, {Chul Woo}",

year = "2002",

month = may,

doi = "10.1116/1.1475984",

language = "English",

volume = "20",

pages = "918--923",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

note = "20th North American Conference on Molecular Beam Epitaxy ; Conference date: 01-10-2001 Through 03-10-2001",

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Kim, SD, Hwang, IS, Park, HM, Rhee, JK & Nam, CW 2002, 'Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 3, pp. 918-923. https://doi.org/10.1116/1.1475984

Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication. / Kim, Sam Dong; Hwang, In Seok; Park, Hyung Moo et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 3, 05.2002, p. 918-923.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication

AU - Kim, Sam Dong

AU - Hwang, In Seok

AU - Park, Hyung Moo

AU - Rhee, Jin Koo

AU - Nam, Chul Woo

PY - 2002/5

Y1 - 2002/5

N2 - The effects of chemical mechanical polishing using a CeO2-based high silicon-nitride/silicon dioxide selectivity slurry on 0.18 μm complementary metal-oxide-semiconductor shallow trench isolation (STI) were investigated. It was shown that within-die and lot-to-lot variations of the remaining pad nitride thickness and the field oxide erosion were significantly reduced when high selectivity slurry (HSS) was employed for STI. Defect in the case of HSS STI polishing were minimized using an optimized in situ filtering method for the slurry. Superior gate oxide integrity was demonstrated with STI polished by in situ filtered HSS.

AB - The effects of chemical mechanical polishing using a CeO2-based high silicon-nitride/silicon dioxide selectivity slurry on 0.18 μm complementary metal-oxide-semiconductor shallow trench isolation (STI) were investigated. It was shown that within-die and lot-to-lot variations of the remaining pad nitride thickness and the field oxide erosion were significantly reduced when high selectivity slurry (HSS) was employed for STI. Defect in the case of HSS STI polishing were minimized using an optimized in situ filtering method for the slurry. Superior gate oxide integrity was demonstrated with STI polished by in situ filtered HSS.

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U2 - 10.1116/1.1475984

DO - 10.1116/1.1475984

M3 - Conference article

AN - SCOPUS:0035998516

SN - 1071-1023

VL - 20

SP - 918

EP - 923

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication

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