TY - JOUR
T1 - Chemically Tunable Organic Dielectric Layer on an Oxide TFT
T2 - Poly(p-xylylene) Derivatives
AU - Kim, Jaehyun
AU - Jang, Seong Cheol
AU - Bae, Kihyeon
AU - Park, Jimin
AU - Kim, Hyoung Do
AU - Lahann, Joerg
AU - Kim, Hyun Suk
AU - Lee, Kyung Jin
N1 - Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/9/15
Y1 - 2021/9/15
N2 - Inorganic materials such as SiOx and SiNx are commonly used as dielectric layers in thin-film transistors (TFTs), but recent advancements in TFT devices, such as inclusion in flexible electronics, require the development of novel types of dielectric layers. In this study, CVD-deposited poly(p-xylylene) (PPx)-based polymers were evaluated as alternative dielectric layers. CVD-deposited PPx can produce thin, conformal, and pinhole-free polymer layers on various surfaces, including oxides and metals, without interfacial defects. Three types of commercial polymers were successfully deposited on various substrates and exhibited stable dielectric properties under frequency and voltage sweeps. Additionally, TFTs with PPx as a dielectric material and an oxide semiconductor exhibited excellent device performance; a mobility as high as 22.72 cm2/(V s), which is the highest value among organic gate dielectric TFTs, to the best of our knowledge. Because of the low-temperature deposition process and its unprecedented mechanical flexibility, TFTs with CVD-deposited PPx were successfully fabricated on a flexible plastic substrate, exhibiting excellent durability over 10000 bending cycles. Finally, a custom-synthesized functionalized PPx was introduced into top-gated TFTs, demonstrating the possibility for expanding this concept to a wide range of chemistries with tunable gate dielectric layers.
AB - Inorganic materials such as SiOx and SiNx are commonly used as dielectric layers in thin-film transistors (TFTs), but recent advancements in TFT devices, such as inclusion in flexible electronics, require the development of novel types of dielectric layers. In this study, CVD-deposited poly(p-xylylene) (PPx)-based polymers were evaluated as alternative dielectric layers. CVD-deposited PPx can produce thin, conformal, and pinhole-free polymer layers on various surfaces, including oxides and metals, without interfacial defects. Three types of commercial polymers were successfully deposited on various substrates and exhibited stable dielectric properties under frequency and voltage sweeps. Additionally, TFTs with PPx as a dielectric material and an oxide semiconductor exhibited excellent device performance; a mobility as high as 22.72 cm2/(V s), which is the highest value among organic gate dielectric TFTs, to the best of our knowledge. Because of the low-temperature deposition process and its unprecedented mechanical flexibility, TFTs with CVD-deposited PPx were successfully fabricated on a flexible plastic substrate, exhibiting excellent durability over 10000 bending cycles. Finally, a custom-synthesized functionalized PPx was introduced into top-gated TFTs, demonstrating the possibility for expanding this concept to a wide range of chemistries with tunable gate dielectric layers.
KW - flexible
KW - hybrid TFTs
KW - oxide semiconductors
KW - polymer dielectrics
KW - room temperature
UR - http://www.scopus.com/inward/record.url?scp=85115150723&partnerID=8YFLogxK
U2 - 10.1021/acsami.1c13865
DO - 10.1021/acsami.1c13865
M3 - Article
C2 - 34472836
AN - SCOPUS:85115150723
SN - 1944-8244
VL - 13
SP - 43123
EP - 43133
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 36
ER -