Coexistence of Long-Term Memory and Short-Term Memory in an SiNx-Based Memristor

Junhyeok Choi, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Complementary metal oxide semiconductor-compatible Ni/SiNx/SiO2/Si devices present good synaptic characteristics for neuromorphic systems on the hardware level. The SiO2 layer detectable by X-ray photoelectron spectroscopy can improve stability and low-power resistive switching. The properties of nonvolatile and volatile memory are determined by the compliance current (strength of the conducting path) during DC voltage sweep. For more practical operation, repeated pulse inputs are applied to the memristor to implement both long-term plasticity and short-term plasticity, determined by pulse interval time. A shorter interval time between two pulses leads to larger paired-pulse facilitation related to short-term plasticity. Finally, ten cycles of potentiation and depression are demonstrated by well-designed pulse schemes. The coexistence of long-term and short-term memory in a Ni/SiNx/SiO2/Si device can provide more flexibility in device design in future neuromorphic systems on the hardware level.

Original languageEnglish
Article number2000357
JournalPhysica Status Solidi - Rapid Research Letters
Volume14
Issue number11
DOIs
StatePublished - 1 Nov 2020

Keywords

  • electronic synaptic devices
  • long-term memory
  • memristors
  • short-term memory
  • silicon nitride

Fingerprint

Dive into the research topics of 'Coexistence of Long-Term Memory and Short-Term Memory in an SiNx-Based Memristor'. Together they form a unique fingerprint.

Cite this