TY - JOUR
T1 - Cognitive Learning and Neuromorphic Systems Using Resistive Switching Random-Access Memory
AU - Noh, Minseo
AU - Park, Hyogeun
AU - Kim, Sungjun
N1 - Publisher Copyright:
© 2025 American Chemical Society.
PY - 2025/3/25
Y1 - 2025/3/25
N2 - The exponential growth in data generation and processing demands has exposed the limitations of the traditional von Neumann architecture. The bottleneck caused by the separation of memory and processing units results in significant constraints on computational speed and energy efficiency. Neuromorphic computing, inspired by the structure and function of biological neural networks, has emerged as a promising alternative that enables adaptive and energy-efficient information processing. Among the various technologies advancing neuromorphic systems, Resistive Random Access Memory (RRAM) stands out due to its high density, low power consumption, fast switching speeds, and multilevel data storage capabilities. RRAM operates based on resistive switching (RS), which dynamically switches between the high-resistance state (HRS) and the low-resistance state (LRS) in response to electrical stimuli. This characteristic enables RRAM to effectively mimic synaptic plasticity, a key feature of biological neural networks, including potentiation, depression, and spike-timing dependent plasticity (STDP). Additionally, RRAM-based devices can emulate complex cognitive learning processes such as learning and forgetting, nociceptive behavior, Pavlovian conditioning, and aversion responses. The integration of RRAM with in-memory computing (CIM) architectures eliminates data transfer bottlenecks and further enhances computational efficiency by performing operations such as vector-matrix multiplication within the memory cells. This synergy is particularly advantageous for energy-efficient, miniaturized edge devices and Internet of Things (IoT) applications, enabling real-time learning and decision-making in advanced AI systems. This review provides an in-depth analysis of the role of RRAM technology in neuromorphic computing, discussing resistive switching mechanisms, architectural innovations, and its applicability in cognitive systems. The unique properties of RRAM position it as a core technology for next-generation adaptive computing with the potential to drive innovations in machine learning, AI, and real-time processing systems.
AB - The exponential growth in data generation and processing demands has exposed the limitations of the traditional von Neumann architecture. The bottleneck caused by the separation of memory and processing units results in significant constraints on computational speed and energy efficiency. Neuromorphic computing, inspired by the structure and function of biological neural networks, has emerged as a promising alternative that enables adaptive and energy-efficient information processing. Among the various technologies advancing neuromorphic systems, Resistive Random Access Memory (RRAM) stands out due to its high density, low power consumption, fast switching speeds, and multilevel data storage capabilities. RRAM operates based on resistive switching (RS), which dynamically switches between the high-resistance state (HRS) and the low-resistance state (LRS) in response to electrical stimuli. This characteristic enables RRAM to effectively mimic synaptic plasticity, a key feature of biological neural networks, including potentiation, depression, and spike-timing dependent plasticity (STDP). Additionally, RRAM-based devices can emulate complex cognitive learning processes such as learning and forgetting, nociceptive behavior, Pavlovian conditioning, and aversion responses. The integration of RRAM with in-memory computing (CIM) architectures eliminates data transfer bottlenecks and further enhances computational efficiency by performing operations such as vector-matrix multiplication within the memory cells. This synergy is particularly advantageous for energy-efficient, miniaturized edge devices and Internet of Things (IoT) applications, enabling real-time learning and decision-making in advanced AI systems. This review provides an in-depth analysis of the role of RRAM technology in neuromorphic computing, discussing resistive switching mechanisms, architectural innovations, and its applicability in cognitive systems. The unique properties of RRAM position it as a core technology for next-generation adaptive computing with the potential to drive innovations in machine learning, AI, and real-time processing systems.
KW - Associative learning
KW - Cognitive learning
KW - In-memory computing
KW - Neuromorphic computing
KW - Resistive random-access memory
KW - Synaptic device
KW - Synaptic plasticity
UR - http://www.scopus.com/inward/record.url?scp=105001207191&partnerID=8YFLogxK
U2 - 10.1021/acsaelm.5c00131
DO - 10.1021/acsaelm.5c00131
M3 - Review article
AN - SCOPUS:105001207191
SN - 2637-6113
VL - 7
SP - 2156
EP - 2172
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 6
ER -