Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content

Donguk Kim, Hee Jun Lee, Tae Jun Yang, Woo Sik Choi, Changwook Kim, Sung Jin Choi, Jong Ho Bae, Dong Myong Kim, Sungjun Kim, Dae Hwan Kim

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p+-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by the applied bias and oxygen flow rate (OFR) during indium gallium zinc oxide (IGZO) deposition. The short- and long-term components in the potentiation and depression curves are modeled by considering the process (OFR of IGZO) and bias conditions. The compact SPICE model with the physical mechanism of SiO2 modulation is introduced, which can be useful for optimizing the specification of memristor devices.

Original languageEnglish
Article number1630
JournalMicromachines
Volume13
Issue number10
DOIs
StatePublished - Oct 2022

Keywords

  • compact modeling
  • indium gallium zinc oxide
  • neuromorphic system
  • synaptic device

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