TY - JOUR
T1 - Comparative evaluation of ZnO nanorod material properties and UV photodetector performance with various transition metal dopings
AU - Nam, Kiyun
AU - Lee, Seungmin
AU - Kim, Jae Hyun
AU - Hong, Gi Young
AU - Kim, Sam Dong
N1 - Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2021/12
Y1 - 2021/12
N2 - In this study, we explore the structural, optical, and chemical properties of ZnO nanorods (NRs) grown through various transition metal (TM) dopings of Cu, Ni, Co, Ni-plus-Cu, and Ni-plus-Co, while investigating the effect of these external dopings on the performance of ZnO NR-based ultra-violet photodetectors (PDs) implemented on polyethylene terephthalate substrates. The TM dopings, especially Ni-plus-Cu or Ni-plus-Co co-doping, not only improve the crystalline quality but also significantly suppress the density of deep-level emission defects in as-grown ZnO NRs, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, increased O/Zn stoichiometry from 0.55 (undoped) to 0.78 and 0.83 is achieved when the NRs doped with Ni-plus-Cu and Ni-plus-Co, respectively, as revealed by X-ray photoelectron spectroscopy. The highest current on–off ratio of ~51 and spectral responsivity of ~136 A/W are obtained from the PDs fabricated with the NRs doped with Ni-plus-Co. The response time of the PDs is also improved with TM dopings, and rise time and fall time are reduced to ~1/5 and ~1/4, respectively, in the case of Ni-plus-Co doping compared to the values of the device fabricated with undoped NRs.
AB - In this study, we explore the structural, optical, and chemical properties of ZnO nanorods (NRs) grown through various transition metal (TM) dopings of Cu, Ni, Co, Ni-plus-Cu, and Ni-plus-Co, while investigating the effect of these external dopings on the performance of ZnO NR-based ultra-violet photodetectors (PDs) implemented on polyethylene terephthalate substrates. The TM dopings, especially Ni-plus-Cu or Ni-plus-Co co-doping, not only improve the crystalline quality but also significantly suppress the density of deep-level emission defects in as-grown ZnO NRs, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, increased O/Zn stoichiometry from 0.55 (undoped) to 0.78 and 0.83 is achieved when the NRs doped with Ni-plus-Cu and Ni-plus-Co, respectively, as revealed by X-ray photoelectron spectroscopy. The highest current on–off ratio of ~51 and spectral responsivity of ~136 A/W are obtained from the PDs fabricated with the NRs doped with Ni-plus-Co. The response time of the PDs is also improved with TM dopings, and rise time and fall time are reduced to ~1/5 and ~1/4, respectively, in the case of Ni-plus-Co doping compared to the values of the device fabricated with undoped NRs.
UR - http://www.scopus.com/inward/record.url?scp=85116813247&partnerID=8YFLogxK
U2 - 10.1007/s10854-021-07134-4
DO - 10.1007/s10854-021-07134-4
M3 - Article
AN - SCOPUS:85116813247
SN - 0957-4522
VL - 32
SP - 27596
EP - 27606
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 23
ER -