Abstract
In this study, we explore the structural, optical, and chemical properties of ZnO nanorods (NRs) grown through various transition metal (TM) dopings of Cu, Ni, Co, Ni-plus-Cu, and Ni-plus-Co, while investigating the effect of these external dopings on the performance of ZnO NR-based ultra-violet photodetectors (PDs) implemented on polyethylene terephthalate substrates. The TM dopings, especially Ni-plus-Cu or Ni-plus-Co co-doping, not only improve the crystalline quality but also significantly suppress the density of deep-level emission defects in as-grown ZnO NRs, as demonstrated by X-ray diffraction and photoluminescence. Furthermore, increased O/Zn stoichiometry from 0.55 (undoped) to 0.78 and 0.83 is achieved when the NRs doped with Ni-plus-Cu and Ni-plus-Co, respectively, as revealed by X-ray photoelectron spectroscopy. The highest current on–off ratio of ~51 and spectral responsivity of ~136 A/W are obtained from the PDs fabricated with the NRs doped with Ni-plus-Co. The response time of the PDs is also improved with TM dopings, and rise time and fall time are reduced to ~1/5 and ~1/4, respectively, in the case of Ni-plus-Co doping compared to the values of the device fabricated with undoped NRs.
| Original language | English |
|---|---|
| Pages (from-to) | 27596-27606 |
| Number of pages | 11 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 32 |
| Issue number | 23 |
| DOIs | |
| State | Published - Dec 2021 |
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