Abstract
DC reactive sputtered ZnO and ZnON thin film transistors (TFTs) was fabricated in order to investigate the role of nitrogen element in the ZnO matrix. After low vacuum annealing at 25 °C, ZnON TFTs exhibited superior device performances (Vth = -0.16V, μsat, = 40.87cm2/Vs and SS = 77V/decade),comparing with ZnO TFT's performance (Vlh = 3.28V, μsat = 0.99 cm2/Vs and SS = 1.22 V/decade) under vacuum probe condition (10-3 torr). The physical and electronic structure was analyzed by X-ray diffraction and X-ray absorption spectroscopy, respectively. The chemical bonding status was also analyzed by X-ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive spurring can suppress the crystal growth and enhance electron mobility due to Zn-N bonding.
Original language | English |
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Pages (from-to) | 1155-1157 |
Number of pages | 3 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 46 |
Issue number | Book 3 |
DOIs | |
State | Published - 1 Jun 2015 |
Event | 2015 SID International Symposium - San Jose, United States Duration: 4 Jun 2015 → … |
Keywords
- Reactive sputtering
- Thin film transistors
- Znon