Comparative study of hybrid perovskite phototransistors based on CVD-grown and spin-coated MAPbI3

Hyoung Do Kim; S. V.N. Pammi; Hae Won Lee; Sung Woo Lee; Soon Gil Yoon; Jozeph Park; Yong Joo Kim; Hyun Suk Kim

doi:10.1016/j.jallcom.2019.152404

Comparative study of hybrid perovskite phototransistors based on CVD-grown and spin-coated MAPbI₃

Hyoung Do Kim, S. V.N. Pammi, Hae Won Lee, Sung Woo Lee, Soon Gil Yoon, Jozeph Park, Yong Joo Kim, Hyun Suk Kim

Department of Energy and Materials Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this study, the properties of methyl ammonium lead iodide (MAPbI₃) hybrid organic-inorganic perovskite films grown by spin-coating and chemical vapor deposition (CVD) method were examined and compared. Atomic force microscopy analyses indicate that the CVD-grown MAPbI₃ films exhibit a smoother surface compared to their spin-coated counterparts. Phototransistors incorporating CVD-grown MAPbI₃ as the active layer exhibit superior electrical characteristics, with field effect mobility values higher by approximately one order of magnitude. The degradation of phototransistors under negative bias stress (NBS) and positive bias stress (PBS) in the presence of illumination was evaluated and discussed based on the charge trapping mechanism.

Original language	English
Article number	152404
Journal	Journal of Alloys and Compounds
Volume	815
DOIs	https://doi.org/10.1016/j.jallcom.2019.152404
State	Published - 30 Jan 2020

Keywords

Chemical vapor deposition
Grain boundary
MAPbI
Negative bias stress
Phototransistor
Positive bias stress

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10.1016/j.jallcom.2019.152404

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title = "Comparative study of hybrid perovskite phototransistors based on CVD-grown and spin-coated MAPbI3",

abstract = "In this study, the properties of methyl ammonium lead iodide (MAPbI3) hybrid organic-inorganic perovskite films grown by spin-coating and chemical vapor deposition (CVD) method were examined and compared. Atomic force microscopy analyses indicate that the CVD-grown MAPbI3 films exhibit a smoother surface compared to their spin-coated counterparts. Phototransistors incorporating CVD-grown MAPbI3 as the active layer exhibit superior electrical characteristics, with field effect mobility values higher by approximately one order of magnitude. The degradation of phototransistors under negative bias stress (NBS) and positive bias stress (PBS) in the presence of illumination was evaluated and discussed based on the charge trapping mechanism.",

keywords = "Chemical vapor deposition, Grain boundary, MAPbI, Negative bias stress, Phototransistor, Positive bias stress",

author = "Kim, {Hyoung Do} and Pammi, {S. V.N.} and Lee, {Hae Won} and Lee, {Sung Woo} and Yoon, {Soon Gil} and Jozeph Park and Kim, {Yong Joo} and Kim, {Hyun Suk}",

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year = "2020",

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day = "30",

doi = "10.1016/j.jallcom.2019.152404",

language = "English",

volume = "815",

journal = "Journal of Alloys and Compounds",

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T1 - Comparative study of hybrid perovskite phototransistors based on CVD-grown and spin-coated MAPbI3

AU - Kim, Hyoung Do

AU - Pammi, S. V.N.

AU - Lee, Hae Won

AU - Lee, Sung Woo

AU - Yoon, Soon Gil

AU - Park, Jozeph

AU - Kim, Yong Joo

AU - Kim, Hyun Suk

PY - 2020/1/30

Y1 - 2020/1/30

N2 - In this study, the properties of methyl ammonium lead iodide (MAPbI3) hybrid organic-inorganic perovskite films grown by spin-coating and chemical vapor deposition (CVD) method were examined and compared. Atomic force microscopy analyses indicate that the CVD-grown MAPbI3 films exhibit a smoother surface compared to their spin-coated counterparts. Phototransistors incorporating CVD-grown MAPbI3 as the active layer exhibit superior electrical characteristics, with field effect mobility values higher by approximately one order of magnitude. The degradation of phototransistors under negative bias stress (NBS) and positive bias stress (PBS) in the presence of illumination was evaluated and discussed based on the charge trapping mechanism.

AB - In this study, the properties of methyl ammonium lead iodide (MAPbI3) hybrid organic-inorganic perovskite films grown by spin-coating and chemical vapor deposition (CVD) method were examined and compared. Atomic force microscopy analyses indicate that the CVD-grown MAPbI3 films exhibit a smoother surface compared to their spin-coated counterparts. Phototransistors incorporating CVD-grown MAPbI3 as the active layer exhibit superior electrical characteristics, with field effect mobility values higher by approximately one order of magnitude. The degradation of phototransistors under negative bias stress (NBS) and positive bias stress (PBS) in the presence of illumination was evaluated and discussed based on the charge trapping mechanism.

KW - Chemical vapor deposition

KW - Grain boundary

KW - MAPbI

KW - Negative bias stress

KW - Phototransistor

KW - Positive bias stress

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U2 - 10.1016/j.jallcom.2019.152404

DO - 10.1016/j.jallcom.2019.152404

M3 - Article

AN - SCOPUS:85072636325

SN - 0925-8388

VL - 815

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 152404

ER -

Comparative study of hybrid perovskite phototransistors based on CVD-grown and spin-coated MAPbI₃

Abstract

Keywords

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