Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor

Seok Gyu Choi; Jung Hun Oh; Bok Hyung Lee; Byeong Ok Lim; Sung Woon Moon; Dong Hoon Shin; Sam Dong Kim; Jin Koo Rhee

doi:10.1093/ietele/e89-c.5.616

Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor

Seok Gyu Choi, Jung Hun Oh, Bok Hyung Lee, Byeong Ok Lim, Sung Woon Moon, Dong Hoon Shin, Sam Dong Kim, Jin Koo Rhee

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility- transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the In-AlAs/InGaAs/InP structure. Compared with the conventional MHEMT. the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S₂₁ gain of approximately 4.35 dB at 50 GHz. and a cut-off frequency (f_T) and a maximum frequency of oscillation (f _max) of approximately 124 GHz and 240 GHz, respectively, were obtained. These are due to decreases in g_o and g_m.

Original language	English
Pages (from-to)	616-620
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E89-C
Issue number	5
DOIs	https://doi.org/10.1093/ietele/e89-c.5.616
State	Published - May 2006

Keywords

Impact ionization coefficient
InP-composite channel
MHEMT
Output conductance

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Choi, S. G., Oh, J. H., Lee, B. H., Lim, B. O., Moon, S. W., Shin, D. H., Kim, S. D., & Rhee, J. K. (2006). Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor. IEICE Transactions on Electronics, E89-C(5), 616-620. https://doi.org/10.1093/ietele/e89-c.5.616

@article{a8524842581a4e98bb08e8f940aaef23,

title = "Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor",

abstract = "To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility- transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the In-AlAs/InGaAs/InP structure. Compared with the conventional MHEMT. the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S21 gain of approximately 4.35 dB at 50 GHz. and a cut-off frequency (fT) and a maximum frequency of oscillation (f max) of approximately 124 GHz and 240 GHz, respectively, were obtained. These are due to decreases in go and gm.",

keywords = "Impact ionization coefficient, InP-composite channel, MHEMT, Output conductance",

author = "Choi, {Seok Gyu} and Oh, {Jung Hun} and Lee, {Bok Hyung} and Lim, {Byeong Ok} and Moon, {Sung Woon} and Shin, {Dong Hoon} and Kim, {Sam Dong} and Rhee, {Jin Koo}",

year = "2006",

month = may,

doi = "10.1093/ietele/e89-c.5.616",

language = "English",

volume = "E89-C",

pages = "616--620",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "5",

}

Choi, SG, Oh, JH, Lee, BH, Lim, BO, Moon, SW, Shin, DH, Kim, SD & Rhee, JK 2006, 'Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor', IEICE Transactions on Electronics, vol. E89-C, no. 5, pp. 616-620. https://doi.org/10.1093/ietele/e89-c.5.616

Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor. / Choi, Seok Gyu; Oh, Jung Hun; Lee, Bok Hyung et al.
In: IEICE Transactions on Electronics, Vol. E89-C, No. 5, 05.2006, p. 616-620.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor

AU - Choi, Seok Gyu

AU - Oh, Jung Hun

AU - Lee, Bok Hyung

AU - Lim, Byeong Ok

AU - Moon, Sung Woon

AU - Shin, Dong Hoon

AU - Kim, Sam Dong

AU - Rhee, Jin Koo

PY - 2006/5

Y1 - 2006/5

N2 - To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility- transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the In-AlAs/InGaAs/InP structure. Compared with the conventional MHEMT. the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S21 gain of approximately 4.35 dB at 50 GHz. and a cut-off frequency (fT) and a maximum frequency of oscillation (f max) of approximately 124 GHz and 240 GHz, respectively, were obtained. These are due to decreases in go and gm.

AB - To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility- transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the In-AlAs/InGaAs/InP structure. Compared with the conventional MHEMT. the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S21 gain of approximately 4.35 dB at 50 GHz. and a cut-off frequency (fT) and a maximum frequency of oscillation (f max) of approximately 124 GHz and 240 GHz, respectively, were obtained. These are due to decreases in go and gm.

KW - Impact ionization coefficient

KW - InP-composite channel

KW - MHEMT

KW - Output conductance

UR - http://www.scopus.com/inward/record.url?scp=33646799093&partnerID=8YFLogxK

U2 - 10.1093/ietele/e89-c.5.616

DO - 10.1093/ietele/e89-c.5.616

M3 - Article

AN - SCOPUS:33646799093

SN - 0916-8524

VL - E89-C

SP - 616

EP - 620

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 5

ER -

Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor

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Keywords

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