Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor

Seok Gyu Choi; Jung Hun Oh; Bok Hyung Lee; Byeong Ok Lim; Sung Woon Moon; Dong Hoon Shin; Sam Dong Kim; Jin Koo Rhee

doi:10.1093/ietele/e89-c.5.616

Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor

Seok Gyu Choi
, Jung Hun Oh
, Bok Hyung Lee
, Byeong Ok Lim
, Sung Woon Moon
, Dong Hoon Shin
, Sam Dong Kim
, Jin Koo Rhee

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility- transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the In-AlAs/InGaAs/InP structure. Compared with the conventional MHEMT. the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S₂₁ gain of approximately 4.35 dB at 50 GHz. and a cut-off frequency (f_T) and a maximum frequency of oscillation (f _max) of approximately 124 GHz and 240 GHz, respectively, were obtained. These are due to decreases in g_o and g_m.

Original language	English
Pages (from-to)	616-620
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	E89-C
Issue number	5
DOIs	https://doi.org/10.1093/ietele/e89-c.5.616
State	Published - May 2006

Keywords

Impact ionization coefficient
InP-composite channel
MHEMT
Output conductance

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10.1093/ietele/e89-c.5.616

Cite this

Choi, S. G., Oh, J. H., Lee, B. H., Lim, B. O., Moon, S. W., Shin, D. H., Kim, S. D., & Rhee, J. K. (2006). Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor. IEICE Transactions on Electronics, E89-C(5), 616-620. https://doi.org/10.1093/ietele/e89-c.5.616

@article{a8524842581a4e98bb08e8f940aaef23,

title = "Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor",

abstract = "To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility- transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the In-AlAs/InGaAs/InP structure. Compared with the conventional MHEMT. the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S21 gain of approximately 4.35 dB at 50 GHz. and a cut-off frequency (fT) and a maximum frequency of oscillation (f max) of approximately 124 GHz and 240 GHz, respectively, were obtained. These are due to decreases in go and gm.",

keywords = "Impact ionization coefficient, InP-composite channel, MHEMT, Output conductance",

author = "Choi, \{Seok Gyu\} and Oh, \{Jung Hun\} and Lee, \{Bok Hyung\} and Lim, \{Byeong Ok\} and Moon, \{Sung Woon\} and Shin, \{Dong Hoon\} and Kim, \{Sam Dong\} and Rhee, \{Jin Koo\}",

year = "2006",

month = may,

doi = "10.1093/ietele/e89-c.5.616",

language = "English",

volume = "E89-C",

pages = "616--620",

journal = "IEICE Transactions on Electronics",

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number = "5",

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Choi, SG, Oh, JH, Lee, BH, Lim, BO, Moon, SW, Shin, DH, Kim, SD & Rhee, JK 2006, 'Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor', IEICE Transactions on Electronics, vol. E89-C, no. 5, pp. 616-620. https://doi.org/10.1093/ietele/e89-c.5.616

Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor. / Choi, Seok Gyu; Oh, Jung Hun; Lee, Bok Hyung et al.
In: IEICE Transactions on Electronics, Vol. E89-C, No. 5, 05.2006, p. 616-620.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor

AU - Choi, Seok Gyu

AU - Oh, Jung Hun

AU - Lee, Bok Hyung

AU - Lim, Byeong Ok

AU - Moon, Sung Woon

AU - Shin, Dong Hoon

AU - Kim, Sam Dong

AU - Rhee, Jin Koo

PY - 2006/5

Y1 - 2006/5

N2 - To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility- transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the In-AlAs/InGaAs/InP structure. Compared with the conventional MHEMT. the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S21 gain of approximately 4.35 dB at 50 GHz. and a cut-off frequency (fT) and a maximum frequency of oscillation (f max) of approximately 124 GHz and 240 GHz, respectively, were obtained. These are due to decreases in go and gm.

AB - To perform a comparative study, we experimented on two differential epitaxial structures, the conventional metamorphic high-electron-mobility- transistor (MHEMT) using the InAlAs/InGaAs/InAlAs structure and the InP-composite-channel MHEMT adopting the In-AlAs/InGaAs/InP structure. Compared with the conventional MHEMT. the InP-composite-channel MHEMT shows improved breakdown performance; more than approximately 3.8 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite-channel MHEMT than that of the conventional MHEMT. The InP-composite-channel MHEMT also shows improved Radio Frequency characteristics of S21 gain of approximately 4.35 dB at 50 GHz. and a cut-off frequency (fT) and a maximum frequency of oscillation (f max) of approximately 124 GHz and 240 GHz, respectively, were obtained. These are due to decreases in go and gm.

KW - Impact ionization coefficient

KW - InP-composite channel

KW - MHEMT

KW - Output conductance

UR - https://www.scopus.com/pages/publications/33646799093

U2 - 10.1093/ietele/e89-c.5.616

DO - 10.1093/ietele/e89-c.5.616

M3 - Article

AN - SCOPUS:33646799093

SN - 0916-8524

VL - E89-C

SP - 616

EP - 620

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 5

ER -

Comparative study on breakdown characteristics for InGaAs metamorphic high electron mobility transistor and InGaAs/InP-composite channel metamorphic high electron mobility transistor

Abstract

Keywords

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