Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

Min Hoe Cho; Hyunju Seol; Aeran Song; Seonjun Choi; Yunheub Song; Pil Sang Yun; Kwun Bum Chung; Jong Uk Bae; Kwon Shik Park; Jae Kyeong Jeong

doi:10.1109/TED.2019.2899586

Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

Min Hoe Cho, Hyunju Seol, Aeran Song, Seonjun Choi, Yunheub Song, Pil Sang Yun, Kwun Bum Chung, Jong Uk Bae, Kwon Shik Park, Jae Kyeong Jeong

Department of Physics

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (V_O), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In_0.50Ga_0.34Zn_0.16O channel by ALD (36.6 cm²/V·s) compared to that of the sputtered In_0.48Ga_0.38Zn_0.14O transistor (20.1 cm²/V·s); the I_ON/OFF ratios for both were 10⁷. Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like V_O density.

Original language	English
Article number	8653874
Pages (from-to)	1783-1788
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	4
DOIs	https://doi.org/10.1109/TED.2019.2899586
State	Published - Apr 2019

Keywords

Atomic layer deposition (ALD)
indium gallium zinc oxide (IGZO)
sputtering
thin-film transistors (TFTs)

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10.1109/TED.2019.2899586

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title = "Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer",

abstract = "The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (VO), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In0.50Ga0.34Zn0.16O channel by ALD (36.6 cm2/V·s) compared to that of the sputtered In0.48Ga0.38Zn0.14O transistor (20.1 cm2/V·s); the ION/OFF ratios for both were 107. Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like VO density.",

keywords = "Atomic layer deposition (ALD), indium gallium zinc oxide (IGZO), sputtering, thin-film transistors (TFTs)",

author = "Cho, {Min Hoe} and Hyunju Seol and Aeran Song and Seonjun Choi and Yunheub Song and Yun, {Pil Sang} and Chung, {Kwun Bum} and Bae, {Jong Uk} and Park, {Kwon Shik} and Jeong, {Jae Kyeong}",

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year = "2019",

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AU - Cho, Min Hoe

AU - Seol, Hyunju

AU - Song, Aeran

AU - Choi, Seonjun

AU - Song, Yunheub

AU - Yun, Pil Sang

AU - Chung, Kwun Bum

AU - Bae, Jong Uk

AU - Park, Kwon Shik

AU - Jeong, Jae Kyeong

PY - 2019/4

Y1 - 2019/4

N2 - The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (VO), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In0.50Ga0.34Zn0.16O channel by ALD (36.6 cm2/V·s) compared to that of the sputtered In0.48Ga0.38Zn0.14O transistor (20.1 cm2/V·s); the ION/OFF ratios for both were 107. Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like VO density.

AB - The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (VO), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In0.50Ga0.34Zn0.16O channel by ALD (36.6 cm2/V·s) compared to that of the sputtered In0.48Ga0.38Zn0.14O transistor (20.1 cm2/V·s); the ION/OFF ratios for both were 107. Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like VO density.

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KW - sputtering

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Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

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