Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

Min Hoe Cho; Hyunju Seol; Aeran Song; Seonjun Choi; Yunheub Song; Pil Sang Yun; Kwun Bum Chung; Jong Uk Bae; Kwon Shik Park; Jae Kyeong Jeong

doi:10.1109/TED.2019.2899586

Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

Min Hoe Cho
, Hyunju Seol
, Aeran Song
, Seonjun Choi
, Yunheub Song
, Pil Sang Yun
, Kwun Bum Chung
, Jong Uk Bae
, Kwon Shik Park
, Jae Kyeong Jeong

Department of Physics

Research output: Contribution to journal › Article › peer-review

113 Scopus citations

Abstract

The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (V_O), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In_0.50Ga_0.34Zn_0.16O channel by ALD (36.6 cm²/V·s) compared to that of the sputtered In_0.48Ga_0.38Zn_0.14O transistor (20.1 cm²/V·s); the I_ON/OFF ratios for both were 10⁷. Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like V_O density.

Original language	English
Article number	8653874
Pages (from-to)	1783-1788
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	4
DOIs	https://doi.org/10.1109/TED.2019.2899586
State	Published - Apr 2019

Keywords

Atomic layer deposition (ALD)
indium gallium zinc oxide (IGZO)
sputtering
thin-film transistors (TFTs)

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10.1109/TED.2019.2899586

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title = "Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer",

abstract = "The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (VO), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In0.50Ga0.34Zn0.16O channel by ALD (36.6 cm2/V·s) compared to that of the sputtered In0.48Ga0.38Zn0.14O transistor (20.1 cm2/V·s); the ION/OFF ratios for both were 107. Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like VO density.",

keywords = "Atomic layer deposition (ALD), indium gallium zinc oxide (IGZO), sputtering, thin-film transistors (TFTs)",

author = "Cho, \{Min Hoe\} and Hyunju Seol and Aeran Song and Seonjun Choi and Yunheub Song and Yun, \{Pil Sang\} and Chung, \{Kwun Bum\} and Bae, \{Jong Uk\} and Park, \{Kwon Shik\} and Jeong, \{Jae Kyeong\}",

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year = "2019",

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doi = "10.1109/TED.2019.2899586",

language = "English",

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AU - Cho, Min Hoe

AU - Seol, Hyunju

AU - Song, Aeran

AU - Choi, Seonjun

AU - Song, Yunheub

AU - Yun, Pil Sang

AU - Chung, Kwun Bum

AU - Bae, Jong Uk

AU - Park, Kwon Shik

AU - Jeong, Jae Kyeong

PY - 2019/4

Y1 - 2019/4

N2 - The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (VO), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In0.50Ga0.34Zn0.16O channel by ALD (36.6 cm2/V·s) compared to that of the sputtered In0.48Ga0.38Zn0.14O transistor (20.1 cm2/V·s); the ION/OFF ratios for both were 107. Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like VO density.

AB - The structural, chemical, and electrical properties of amorphous indium gallium zinc oxide (a-IGZO) films by magnetron sputtering and atomic layer deposition (ALD) were investigated where both a-IGZO films had a comparable cation composition. The ALD-derived a-IGZO film exhibited the higher atomic packing density, the effective suppression of trap-like oxygen vacancy defect (VO), and the enhancement in the hybridization of the sp orbital of In, Ga, and Zn cations compared to those of the sputtered a-IGZO film. Hence, a significant improvement in terms of the field-effect mobility was observed for the thin-film transistors with an In0.50Ga0.34Zn0.16O channel by ALD (36.6 cm2/V·s) compared to that of the sputtered In0.48Ga0.38Zn0.14O transistor (20.1 cm2/V·s); the ION/OFF ratios for both were 107. Simultaneously, the gate bias stress stability and photobias stress stability were also improved for the IGZO transistors with an ALD-derived channel, which can be explained by its reduced trap-like VO density.

KW - Atomic layer deposition (ALD)

KW - indium gallium zinc oxide (IGZO)

KW - sputtering

KW - thin-film transistors (TFTs)

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DO - 10.1109/TED.2019.2899586

M3 - Article

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

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