Comparison of dot schottkcy and MHEMT diodes for 94 GHz mixer applications

Ho Bang Seok; Jin Lee Sang; Kyo Lee Mun; Sik Ko Dong; Sung Woon Moon; Hyun Baek Yong; Min Han; Gyu Choi Seok; Jong Baek Tae; Byoung Chul Jun; Chul Park Dong; Sam Dong Kim; Koo Rhee Jin

doi:10.1109/GSMM.2008.4534555

Comparison of dot schottkcy and MHEMT diodes for 94 GHz mixer applications

Ho Bang Seok, Jin Lee Sang, Kyo Lee Mun, Sik Ko Dong, Sung Woon Moon, Hyun Baek Yong, Min Han, Gyu Choi Seok, Jong Baek Tae, Byoung Chul Jun, Chul Park Dong, Sam Dong Kim, Koo Rhee Jin

Department of Electronics & Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Ω, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.

Original language	English
Title of host publication	2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008
DOIs	https://doi.org/10.1109/GSMM.2008.4534555
State	Published - 2008
Event	2008 Global Symposium on Millimeter Waves, GSMM 2008 - Nanjing, China Duration: 21 Apr 2008 → 24 Apr 2008

Publication series

Name	2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

Conference

Conference	2008 Global Symposium on Millimeter Waves, GSMM 2008
Country/Territory	China
City	Nanjing
Period	21/04/08 → 24/04/08

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10.1109/GSMM.2008.4534555

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Seok, H. B., Sang, J. L., Mun, K. L., Dong, S. K., Moon, S. W., Yong, H. B., Han, M., Seok, G. C., Tae, J. B., Jun, B. C., Dong, C. P., Kim, S. D., & Jin, K. R. (2008). Comparison of dot schottkcy and MHEMT diodes for 94 GHz mixer applications. In 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008 Article 4534555 (2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008). https://doi.org/10.1109/GSMM.2008.4534555

@inproceedings{652d84813c7c4af485189d5819c3a8ad,

title = "Comparison of dot schottkcy and MHEMT diodes for 94 GHz mixer applications",

abstract = "In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Ω, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.",

author = "Seok, {Ho Bang} and Sang, {Jin Lee} and Mun, {Kyo Lee} and Dong, {Sik Ko} and Moon, {Sung Woon} and Yong, {Hyun Baek} and Min Han and Seok, {Gyu Choi} and Tae, {Jong Baek} and Jun, {Byoung Chul} and Dong, {Chul Park} and Kim, {Sam Dong} and Jin, {Koo Rhee}",

year = "2008",

doi = "10.1109/GSMM.2008.4534555",

language = "English",

isbn = "9781424418855",

series = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",

booktitle = "2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008",

note = "2008 Global Symposium on Millimeter Waves, GSMM 2008 ; Conference date: 21-04-2008 Through 24-04-2008",

}

Seok, HB, Sang, JL, Mun, KL, Dong, SK, Moon, SW, Yong, HB, Han, M, Seok, GC, Tae, JB, Jun, BC, Dong, CP, Kim, SD & Jin, KR 2008, Comparison of dot schottkcy and MHEMT diodes for 94 GHz mixer applications. in 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008., 4534555, 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008, 2008 Global Symposium on Millimeter Waves, GSMM 2008, Nanjing, China, 21/04/08. https://doi.org/10.1109/GSMM.2008.4534555

Comparison of dot schottkcy and MHEMT diodes for 94 GHz mixer applications. / Seok, Ho Bang; Sang, Jin Lee; Mun, Kyo Lee et al.
2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008. 2008. 4534555 (2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of dot schottkcy and MHEMT diodes for 94 GHz mixer applications

AU - Seok, Ho Bang

AU - Sang, Jin Lee

AU - Mun, Kyo Lee

AU - Dong, Sik Ko

AU - Moon, Sung Woon

AU - Yong, Hyun Baek

AU - Han, Min

AU - Seok, Gyu Choi

AU - Tae, Jong Baek

AU - Jun, Byoung Chul

AU - Dong, Chul Park

AU - Kim, Sam Dong

AU - Jin, Koo Rhee

PY - 2008

Y1 - 2008

N2 - In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Ω, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.

AB - In this paper, we designed a dot type GaAs Schottky diode for improvement of RF characteristics. The dot type GaAs Schottky diode shows that total resistance is 18.3 Ω, ideality factor is 1.41 at the room temperature and cut-off frequency is 435 GHz. The simulation result of designed single balanced mixer structure shows a good conversion loss of 6.28 dB.

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U2 - 10.1109/GSMM.2008.4534555

DO - 10.1109/GSMM.2008.4534555

M3 - Conference contribution

AN - SCOPUS:50449098307

SN - 9781424418855

T3 - 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

BT - 2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

T2 - 2008 Global Symposium on Millimeter Waves, GSMM 2008

Y2 - 21 April 2008 through 24 April 2008

ER -

Comparison of dot schottkcy and MHEMT diodes for 94 GHz mixer applications

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