@inproceedings{c7a8ad3cdcf34318ba8428481e1d964e,
title = "Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses",
abstract = "This paper presents switching characteristics of Ni/HfOx/p+-Si with different switching layer thicknesses (5/10 nm) in DC mode. Larger forming voltage and on/off ratio is obtained from the 10 nm HfOx RRAM while step-like reset process is seen from 5 nm HfOx RRAM. From the measurement results, fabricated RRAM device with thicker switching layer is more suitable for nonvolatile memory operation while thinner HfOx layer has potential for application in neuromorphic computing system.",
author = "Lee, {Dong Keun} and Kim, {Min Hwi} and Suhyun Bang and Kim, {Tae Hyeon} and Choi, {Yeon Joon} and Sungjun Kim and Seongjae Cho and Park, {Byung Gook}",
note = "Publisher Copyright: {\textcopyright} 2019 JSAP.; 24th Silicon Nanoelectronics Workshop, SNW 2019 ; Conference date: 09-06-2019 Through 10-06-2019",
year = "2019",
month = jun,
doi = "10.23919/SNW.2019.8782952",
language = "English",
series = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 Silicon Nanoelectronics Workshop, SNW 2019",
address = "United States",
}