Comparison of switching characteristics of HfOx RRAM device with different switching layer thicknesses
- Dong Keun Lee
- , Min Hwi Kim
- , Suhyun Bang
- , Tae Hyeon Kim
- , Yeon Joon Choi
- , Sungjun Kim
- , Seongjae Cho
- , Byung Gook Park
- Seoul National University
- Gachon University
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review