TY - JOUR
T1 - Comparison studies on electrodeposited CdSe, SnSe and Cd xSn1−xSe thin films
AU - Dhanasekaran, V.
AU - Jung, Jongwan
AU - Lee, Kee Keun
AU - Mahalingam, T.
N1 - Publisher Copyright:
© 2014, Springer-Verlag Berlin Heidelberg.
PY - 2015/4
Y1 - 2015/4
N2 - Electroplated cadmium stannous selenide (CdxSn1−xSe) thin films were coated on indium-doped tin oxide (ITO) conducting glass substrates from aqueous bath solutions containing CdCl2, SnCl2, and Na2SeO3. The x value was tuned by change in metal ion source concentration of the electrolytic bath solution. The various x values such as 1, 0.7, 0.45, and 0, of CdxSn1−xSe thin films were characterized by structural, morphological, compositional, and optical properties using X-ray diffraction, scanning electron microscopy, energy dispersive analysis by X-rays, and UV-vis-NIR spectrophotometer, respectively. X-ray diffraction (XRD) patterns revealed that the deposited films exhibit polycrystalline nature CdxSn1−xSe thin films. The microstructural parameters such as crystallite size, dislocation density, microstrain, and number of crystallites per unit area were calculated and presented. Morphological studies revealed that spherical-shaped grains were observed in cadmium-dominated films and nano-rod-shaped grains were observed in tin-dominated films. Optical properties of CdSnSe films were determined from optical transmittance data in the spectral range 400 to 1,100 nm. The optical direct transition energy band gap was estimated using conventional method, and band gap energy was lying between 1.02 and 1.83 eV. The refractive index, extinction coefficient, and real and imaginary parts of dielectric constants were calculated using optical transmission spectra of CdxSn1−xSe thin films.
AB - Electroplated cadmium stannous selenide (CdxSn1−xSe) thin films were coated on indium-doped tin oxide (ITO) conducting glass substrates from aqueous bath solutions containing CdCl2, SnCl2, and Na2SeO3. The x value was tuned by change in metal ion source concentration of the electrolytic bath solution. The various x values such as 1, 0.7, 0.45, and 0, of CdxSn1−xSe thin films were characterized by structural, morphological, compositional, and optical properties using X-ray diffraction, scanning electron microscopy, energy dispersive analysis by X-rays, and UV-vis-NIR spectrophotometer, respectively. X-ray diffraction (XRD) patterns revealed that the deposited films exhibit polycrystalline nature CdxSn1−xSe thin films. The microstructural parameters such as crystallite size, dislocation density, microstrain, and number of crystallites per unit area were calculated and presented. Morphological studies revealed that spherical-shaped grains were observed in cadmium-dominated films and nano-rod-shaped grains were observed in tin-dominated films. Optical properties of CdSnSe films were determined from optical transmittance data in the spectral range 400 to 1,100 nm. The optical direct transition energy band gap was estimated using conventional method, and band gap energy was lying between 1.02 and 1.83 eV. The refractive index, extinction coefficient, and real and imaginary parts of dielectric constants were calculated using optical transmission spectra of CdxSn1−xSe thin films.
KW - Chemical synthesis
KW - Microstructure
KW - Optical properties
KW - Semiconductors
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=84925486753&partnerID=8YFLogxK
U2 - 10.1007/s11581-014-1251-8
DO - 10.1007/s11581-014-1251-8
M3 - Article
AN - SCOPUS:84925486753
SN - 0947-7047
VL - 21
SP - 1187
EP - 1192
JO - Ionics
JF - Ionics
IS - 4
ER -