Complementary resistive switching mechanism in Ti-based triple TiO _x /TiN/TiO _x and TiO _x /TiO _x N _y /TiO _x matrix

We report the complementary resistive switching (CRS) origins of two hetero TiO _x /TiN/TiO _x and TiO _x /TiO _x N _y /TiO _x matrix, allowing for the possible memory operation without the use of selection device. Each matrix consisted of anti-serially combined bipolar switching elements 1 and 2, where one bipolar switching element 1 was Pt/top TiO _x /bottom TiN or TiO _x N _y , and the other switching element 2 was top TiN or TiO _x N _y /bottom TiO _x /Pt. The electrical properties of the two matrices suggested that the nature of CRS behaviors was based on a combination of the filamentary conduction paths in the top and bottom TiO _x layers and the redox reaction induced by oxygen ion drift at the interfaces of the middle TiN and TiO _x N _y layers.