Compute-in-Memory with SAR ADC and 2T1C DRAM for MAC Operations

Tae Eun Jang, Kyu Hyun Lee, Gi Yeol Kim, Su Yeon Yun, Da Hyeon Youn, Hyunggu Choi, Jihyang Kim, Soo Youn Kim, Minkyu Song

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper presents a compute-in-memory (CIM) architecture for MAC operation using 2T1 C dynamic random access memory (DRAM) and a successive-approximation analog-to-digital converter (SAR ADC). The proposed design features CIM analog multiplication and summation architecture consisting of a digital-to-time converter (DTC) and SAR ADC. The DTC converts the input code into clock-based pulse width, and the calculation can be done by passing through pulse into a 2T1C DRAM array in parallel. The proposed structure is implemented using a 28-nm CMOS process, operates four parallel 2-bit× 4-bit multiplication and total summation simultaneously, and a single calculation requires 140ns for 100MHz system clock frequency.

Original languageEnglish
Title of host publication2024 International Conference on Electronics, Information, and Communication, ICEIC 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350371888
DOIs
StatePublished - 2024
Event2024 International Conference on Electronics, Information, and Communication, ICEIC 2024 - Taipei, Taiwan, Province of China
Duration: 28 Jan 202431 Jan 2024

Publication series

Name2024 International Conference on Electronics, Information, and Communication, ICEIC 2024

Conference

Conference2024 International Conference on Electronics, Information, and Communication, ICEIC 2024
Country/TerritoryTaiwan, Province of China
CityTaipei
Period28/01/2431/01/24

Keywords

  • 2T1C DRAM
  • Compute-In-Memory
  • Process-In-Memory
  • Successive approximation analog-to-digital converter

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