Conductance quantization behavior in pt/sin/tan rram device for multilevel cell

Jongmin Park, Seungwook Lee, Kisong Lee, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this work, we fabricated a Pt/SiN/TaN memristor device and characterized its resistive switching by controlling the compliance current and switching polarity. The chemical and material properties of SiN and TaN were investigated by X-ray photoelectron spectroscopy. Compared with the case of a high compliance current (5 mA), the resistive switching was more gradual in the set and reset processes when a low compliance current (1 mA) was applied by DC sweep and pulse train. In particular, low-power resistive switching was demonstrated in the first reset process, and was achieved by employing the negative differential resistance effect. Furthermore, conductance quantization was observed in the reset process upon decreasing the DC sweep speed. These results have the potential for multilevel cell (MLC) operation. Additionally, the conduction mechanism of the memristor device was investigated by I-V fitting.

Original languageEnglish
Article number1918
JournalMetals
Volume11
Issue number12
DOIs
StatePublished - Dec 2021

Keywords

  • Conduction mechanism
  • Memristor
  • Resistive switching
  • Silicon nitride

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