Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions

Ki Jin Han; Madhavan Swaminathan

doi:10.1109/EDAPS.2012.6469430

Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions

Ki Jin Han, Madhavan Swaminathan

Department of Electronics & Electrical Engineering

Georgia Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

TSV modeling method based on cylindrical modal basis functions is modified to consider the effect of depletion region formed by a DC bias voltage. Extended capacitance matrix equation is obtained to include depletion capacitances, and the new formula is inserted to the original formulation. The proposed method is tested for two TSVs with varying depletion depths, and the computed insertion losses, capacitance, and conductance show reasonable trends.

Original language	English
Title of host publication	2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
Pages	41-44
Number of pages	4
DOIs	https://doi.org/10.1109/EDAPS.2012.6469430
State	Published - 2012
Event	2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012 - Taipei, Taiwan, Province of China Duration: 9 Dec 2012 → 11 Dec 2012

Publication series

Name	2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012

Conference

Conference	2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012
Country/Territory	Taiwan, Province of China
City	Taipei
Period	9/12/12 → 11/12/12

Access to Document

10.1109/EDAPS.2012.6469430

Cite this

Han, K. J., & Swaminathan, M. (2012). Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions. In 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012 (pp. 41-44). Article 6469430 (2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012). https://doi.org/10.1109/EDAPS.2012.6469430

@inproceedings{8d8c6f3edf484e8c926576c15d56d3ea,

title = "Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions",

abstract = "TSV modeling method based on cylindrical modal basis functions is modified to consider the effect of depletion region formed by a DC bias voltage. Extended capacitance matrix equation is obtained to include depletion capacitances, and the new formula is inserted to the original formulation. The proposed method is tested for two TSVs with varying depletion depths, and the computed insertion losses, capacitance, and conductance show reasonable trends.",

author = "Han, {Ki Jin} and Madhavan Swaminathan",

year = "2012",

doi = "10.1109/EDAPS.2012.6469430",

language = "English",

isbn = "9781467314435",

series = "2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012",

pages = "41--44",

booktitle = "2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012",

note = "2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012 ; Conference date: 09-12-2012 Through 11-12-2012",

}

Han, KJ & Swaminathan, M 2012, Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions. in 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012., 6469430, 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012, pp. 41-44, 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012, Taipei, Taiwan, Province of China, 9/12/12. https://doi.org/10.1109/EDAPS.2012.6469430

Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions. / Han, Ki Jin; Swaminathan, Madhavan.
2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012. 2012. p. 41-44 6469430 (2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions

AU - Han, Ki Jin

AU - Swaminathan, Madhavan

PY - 2012

Y1 - 2012

N2 - TSV modeling method based on cylindrical modal basis functions is modified to consider the effect of depletion region formed by a DC bias voltage. Extended capacitance matrix equation is obtained to include depletion capacitances, and the new formula is inserted to the original formulation. The proposed method is tested for two TSVs with varying depletion depths, and the computed insertion losses, capacitance, and conductance show reasonable trends.

AB - TSV modeling method based on cylindrical modal basis functions is modified to consider the effect of depletion region formed by a DC bias voltage. Extended capacitance matrix equation is obtained to include depletion capacitances, and the new formula is inserted to the original formulation. The proposed method is tested for two TSVs with varying depletion depths, and the computed insertion losses, capacitance, and conductance show reasonable trends.

UR - http://www.scopus.com/inward/record.url?scp=84875486556&partnerID=8YFLogxK

U2 - 10.1109/EDAPS.2012.6469430

DO - 10.1109/EDAPS.2012.6469430

M3 - Conference contribution

AN - SCOPUS:84875486556

SN - 9781467314435

T3 - 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012

SP - 41

EP - 44

BT - 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012

T2 - 2012 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2012

Y2 - 9 December 2012 through 11 December 2012

ER -

Consideration of MOS capacitance effect in TSV modeling based on cylindrical modal basis functions

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this