Abstract
Various copper oxide films were successfully grown by plasma-enhanced atomic layer deposition (PEALD) at a low temperature of 100 C. X-ray diffraction analysis of the films indicated that phase-controlled deposition of CuO x phases (0 ≤ x < 1) was possible by controlling the number of Cu deposition steps during one PEALD cycle with a fixed oxidation step. When Cu deposition was executed in one step, an amorphous CuO x (x = 0.9) film with a smooth surface (RMS roughness of 0.97 nm) was obtained. On the other hand, when the number of Cu deposition steps was increased to three, a CuO x (x = 0.6) thin film with a polycrystalline phase (grain size: 25 nm) was obtained. The as-deposited CuO 0.6 film showed p-type conductivity (Hall mobility ∼37 cm 2 /V·s and hole concentration ∼5.4 × 10 14 cm -3 ). Moreover, p-type CuO 0.6 /n-type ZnO heterojunction diodes fabricated on a flexible polyethylene terephthalate substrate exhibited electrical rectification with a threshold voltage of 1.2 V.
Original language | English |
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Pages (from-to) | 373-379 |
Number of pages | 7 |
Journal | Applied Surface Science |
Volume | 285 |
Issue number | PARTB |
DOIs | |
State | Published - 15 Nov 2013 |
Keywords
- Cuprous oxide
- Heterojunction
- p-type
- PEALD
- Semiconductor
- XPS
- XRD