TY - JOUR
T1 - Controlling of resistive switching and magnetism through Cu2+ ions substitution in nickel ferrite based nonvolatile memory
AU - Hao, Aize
AU - Jia, Dianzeng
AU - Ismail, Muhammad
AU - Chen, Ruqi
AU - Bao, Dinghua
N1 - Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/6/25
Y1 - 2019/6/25
N2 - Ni-Cu ferrite (Ni1-xCuxFe2O4, x = 0, 0.05, 0.1, 0.15, 0.2, 0.25) thin films were synthesized on Pt/Ti/SiO2/Si substrates via sol-gel method. The influence of Cu2+ ions substitution on the resistive switching and magnetism of nickel ferrite thin films were investigated. The appropriate 0.2 Cu2+ ions substituted Pt/NFO/Pt device exhibited improved resistive switching parameters such as lower electroforming voltages, narrow distribution of SET/RESET voltages, good endurance (103 cycles), and long data retention upto 105 s at 25 °C and 85 °C, respectively. With increasing Cu2+ ions substitution, the saturation magnetization of Ni-Cu ferrite thin films decreased. The 0.2 Cu2+ ions substituted Pt/NFO/Pt device illustrated the controlling magnetism by accompanying with high saturation magnetization to switch into low saturation magnetization during the resistive switching process. The modulation of Cu2+ ions substitution on the magnetic properties was linked with magnetic moments and oxygen vacancies concentrations. Current transport conduction mechanisms were Ohmic behavior in low resistance state and Schottky emission in high field region of high resistance state. Moreover, temperature dependence of resistance revealed that origin of switching mechanism was related with the hybrid Cu mental and oxygen vacancies conducting filaments. Our results suggest that controlling the paths of hybrid conductive filaments is an effective strategy to modulate resistive switching performance and magnetism in ferrite based devices.
AB - Ni-Cu ferrite (Ni1-xCuxFe2O4, x = 0, 0.05, 0.1, 0.15, 0.2, 0.25) thin films were synthesized on Pt/Ti/SiO2/Si substrates via sol-gel method. The influence of Cu2+ ions substitution on the resistive switching and magnetism of nickel ferrite thin films were investigated. The appropriate 0.2 Cu2+ ions substituted Pt/NFO/Pt device exhibited improved resistive switching parameters such as lower electroforming voltages, narrow distribution of SET/RESET voltages, good endurance (103 cycles), and long data retention upto 105 s at 25 °C and 85 °C, respectively. With increasing Cu2+ ions substitution, the saturation magnetization of Ni-Cu ferrite thin films decreased. The 0.2 Cu2+ ions substituted Pt/NFO/Pt device illustrated the controlling magnetism by accompanying with high saturation magnetization to switch into low saturation magnetization during the resistive switching process. The modulation of Cu2+ ions substitution on the magnetic properties was linked with magnetic moments and oxygen vacancies concentrations. Current transport conduction mechanisms were Ohmic behavior in low resistance state and Schottky emission in high field region of high resistance state. Moreover, temperature dependence of resistance revealed that origin of switching mechanism was related with the hybrid Cu mental and oxygen vacancies conducting filaments. Our results suggest that controlling the paths of hybrid conductive filaments is an effective strategy to modulate resistive switching performance and magnetism in ferrite based devices.
KW - Cu ions substitution
KW - Hybrid conducting filaments
KW - Magnetism
KW - Ni-Cu ferrite
KW - Resistive switching
UR - http://www.scopus.com/inward/record.url?scp=85062998877&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2019.03.193
DO - 10.1016/j.jallcom.2019.03.193
M3 - Article
AN - SCOPUS:85062998877
SN - 0925-8388
VL - 790
SP - 70
EP - 77
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
ER -