Coplanar ferroelectric phase shifter on silicon substrate with TiO 2 buffer layer

Ki Byoung Kim; Tae Soon Yun; Hyun Suk Kim; Il Doo Kim; Ho Gi Kim; Jong Chul Lee

doi:10.1109/EUMC.2005.1608940

Coplanar ferroelectric phase shifter on silicon substrate with TiO ₂ buffer layer

Ki Byoung Kim, Tae Soon Yun, Hyun Suk Kim, Il Doo Kim, Ho Gi Kim, Jong Chul Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

In this paper, a BST coplanar phase shifter with differential phase shift of 98° at 50 V and FoM of 46.7°/dB has been realized. The potential feasibility of integrating BST films into Si substrate as microwave phase shifter and/or coplanar waveguide tunable devices with TiO₂ thin film buffer layer has been successfully demonstrated. TiO₂ as buffer layer has been successfully grown onto Si substrate by ALD (atomic layer deposition).

Original language	English
Title of host publication	35th European Microwave Conference 2005 - Conference Proceedings
Pages	649-652
Number of pages	4
DOIs	https://doi.org/10.1109/EUMC.2005.1608940
State	Published - 2005
Event	2005 European Microwave Conference - Paris, France Duration: 4 Oct 2005 → 6 Oct 2005

Publication series

Name	35th European Microwave Conference 2005 - Conference Proceedings
Volume	1

Conference

Conference	2005 European Microwave Conference
Country/Territory	France
City	Paris
Period	4/10/05 → 6/10/05

Access to Document

10.1109/EUMC.2005.1608940

Cite this

Kim, K. B., Yun, T. S., Kim, H. S., Kim, I. D., Kim, H. G., & Lee, J. C. (2005). Coplanar ferroelectric phase shifter on silicon substrate with TiO ₂ buffer layer. In 35th European Microwave Conference 2005 - Conference Proceedings (pp. 649-652). Article 1608940 (35th European Microwave Conference 2005 - Conference Proceedings; Vol. 1). https://doi.org/10.1109/EUMC.2005.1608940

@inproceedings{8fcd9c403ba449e39c9df517da464028,

title = "Coplanar ferroelectric phase shifter on silicon substrate with TiO 2 buffer layer",

abstract = "In this paper, a BST coplanar phase shifter with differential phase shift of 98° at 50 V and FoM of 46.7°/dB has been realized. The potential feasibility of integrating BST films into Si substrate as microwave phase shifter and/or coplanar waveguide tunable devices with TiO2 thin film buffer layer has been successfully demonstrated. TiO2 as buffer layer has been successfully grown onto Si substrate by ALD (atomic layer deposition).",

author = "Kim, {Ki Byoung} and Yun, {Tae Soon} and Kim, {Hyun Suk} and Kim, {Il Doo} and Kim, {Ho Gi} and Lee, {Jong Chul}",

year = "2005",

doi = "10.1109/EUMC.2005.1608940",

language = "English",

isbn = "2960055128",

series = "35th European Microwave Conference 2005 - Conference Proceedings",

pages = "649--652",

booktitle = "35th European Microwave Conference 2005 - Conference Proceedings",

note = "2005 European Microwave Conference ; Conference date: 04-10-2005 Through 06-10-2005",

}

Kim, KB, Yun, TS, Kim, HS, Kim, ID, Kim, HG & Lee, JC 2005, Coplanar ferroelectric phase shifter on silicon substrate with TiO ₂ buffer layer. in 35th European Microwave Conference 2005 - Conference Proceedings., 1608940, 35th European Microwave Conference 2005 - Conference Proceedings, vol. 1, pp. 649-652, 2005 European Microwave Conference, Paris, France, 4/10/05. https://doi.org/10.1109/EUMC.2005.1608940

Coplanar ferroelectric phase shifter on silicon substrate with TiO ₂ buffer layer. / Kim, Ki Byoung; Yun, Tae Soon; Kim, Hyun Suk et al.
35th European Microwave Conference 2005 - Conference Proceedings. 2005. p. 649-652 1608940 (35th European Microwave Conference 2005 - Conference Proceedings; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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