Correlation between carrier localization, optical, and structural properties in multilayered GaN/ Al0.5 Ga0.5 N quantum wells with an ultrathin inserted Al0.5 Ga0.5 N layer

Young S. Park; Yongmin Kim; Hyunsik Im

doi:10.1063/1.3386381

Correlation between carrier localization, optical, and structural properties in multilayered GaN/ Al_0.5 Ga_0.5 N quantum wells with an ultrathin inserted Al_0.5 Ga_0.5 N layer

Young S. Park, Yongmin Kim, Hyunsik Im

Division of System Semiconductor

Dongguk University

Research output: Contribution to journal › Article › peer-review

Abstract

We report that the performance of the optical properties in multilayered GaN/ Al_0.5 Ga_0.5 N quantum wells is improved by inserting an ultrathin (5 Å) Al_0.5 Ga_0.5 N layer in the middle of the GaN layers. A considerable redshift in the photoluminescence and the cathodoluminescence (CL) spectra is observed due to the additional strain along the growth direction resulting in piezoelectric polarization. The structural uniformity along the plane directions is investigated using two dimensional CL mapping. The results presented are useful for tuning the optical properties of multilayered heterojunction optoelectronic devices.

Original language	English
Article number	086102
Journal	Journal of Applied Physics
Volume	107
Issue number	8
DOIs	https://doi.org/10.1063/1.3386381
State	Published - 15 Apr 2010

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abstract = "We report that the performance of the optical properties in multilayered GaN/ Al0.5 Ga0.5 N quantum wells is improved by inserting an ultrathin (5 {\AA}) Al0.5 Ga0.5 N layer in the middle of the GaN layers. A considerable redshift in the photoluminescence and the cathodoluminescence (CL) spectra is observed due to the additional strain along the growth direction resulting in piezoelectric polarization. The structural uniformity along the plane directions is investigated using two dimensional CL mapping. The results presented are useful for tuning the optical properties of multilayered heterojunction optoelectronic devices.",

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AU - Im, Hyunsik

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N2 - We report that the performance of the optical properties in multilayered GaN/ Al0.5 Ga0.5 N quantum wells is improved by inserting an ultrathin (5 Å) Al0.5 Ga0.5 N layer in the middle of the GaN layers. A considerable redshift in the photoluminescence and the cathodoluminescence (CL) spectra is observed due to the additional strain along the growth direction resulting in piezoelectric polarization. The structural uniformity along the plane directions is investigated using two dimensional CL mapping. The results presented are useful for tuning the optical properties of multilayered heterojunction optoelectronic devices.

AB - We report that the performance of the optical properties in multilayered GaN/ Al0.5 Ga0.5 N quantum wells is improved by inserting an ultrathin (5 Å) Al0.5 Ga0.5 N layer in the middle of the GaN layers. A considerable redshift in the photoluminescence and the cathodoluminescence (CL) spectra is observed due to the additional strain along the growth direction resulting in piezoelectric polarization. The structural uniformity along the plane directions is investigated using two dimensional CL mapping. The results presented are useful for tuning the optical properties of multilayered heterojunction optoelectronic devices.

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Correlation between carrier localization, optical, and structural properties in multilayered GaN/ Al_0.5 Ga_0.5 N quantum wells with an ultrathin inserted Al_0.5 Ga_0.5 N layer

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