Abstract
The lateral photovoltaic effect (LPE) can be observed in semiconductors by irradiating a light spot position between electrodes on sample's surface. Because lateral photovoltaic voltage (LPV) is sensitively changed by light spot position, a LPE device has been tried as a position-sensitive detector. This study discusses the correlation between LPV and conductivity in p-type silicon and nano-structured Au deposited p-type silicon (nano-Au silicon), respectively. Conductivity measurement of the sample was carried out using the four-wire method to eliminate contact resistance, and conductivity dependence on LPV was simultaneously measured by changing the light irradiation position. The result showed a strong correlation between conductivity and LPV in the p-type silicon sample. The correlation coefficient was 0.87. The correlation coefficient between LPV and conductivity for the nano-Au silicon sample was 0.41.
Original language | English |
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Pages (from-to) | 1845-1847 |
Number of pages | 3 |
Journal | Bulletin of the Korean Chemical Society |
Volume | 34 |
Issue number | 6 |
DOIs | |
State | Published - 20 Jun 2013 |
Keywords
- Conductivity
- Correlation coefficient
- Four-wire method
- Lateral photovoltaic effect (LPE)
- Lateral photovoltaic voltage (LPV)