Correlation between lateral photovoltaic effect and conductivity in p-type silicon substrates

Seung Hoon Lee, Muncheol Shin, Seongpil Hwang, Sung Heum Park, Jae Won Jang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The lateral photovoltaic effect (LPE) can be observed in semiconductors by irradiating a light spot position between electrodes on sample's surface. Because lateral photovoltaic voltage (LPV) is sensitively changed by light spot position, a LPE device has been tried as a position-sensitive detector. This study discusses the correlation between LPV and conductivity in p-type silicon and nano-structured Au deposited p-type silicon (nano-Au silicon), respectively. Conductivity measurement of the sample was carried out using the four-wire method to eliminate contact resistance, and conductivity dependence on LPV was simultaneously measured by changing the light irradiation position. The result showed a strong correlation between conductivity and LPV in the p-type silicon sample. The correlation coefficient was 0.87. The correlation coefficient between LPV and conductivity for the nano-Au silicon sample was 0.41.

Original languageEnglish
Pages (from-to)1845-1847
Number of pages3
JournalBulletin of the Korean Chemical Society
Volume34
Issue number6
DOIs
StatePublished - 20 Jun 2013

Keywords

  • Conductivity
  • Correlation coefficient
  • Four-wire method
  • Lateral photovoltaic effect (LPE)
  • Lateral photovoltaic voltage (LPV)

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