Correlation between optical localization-state and electrical deep-level state in in0.52al0.48as/in0.53ga0.47as quantum well structure

Il Ho Ahn, Deuk Young Kim, Sejoon Lee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The peculiar correlationship between the optical localization-state and the electrical deep-level defect-state was observed in the In0.52Al0.48As/In0.53Ga0.47As quantum well structure that com-prises two quantum-confined electron-states and two hole-subbands. The sample clearly exhibited the Fermi edge singularity (FES) peak in its photoluminescence spectrum at 10–300 K; and the FES peak was analyzed in terms of the phenomenological line shape model with key physical parameters such as the Fermi energy, the hole localization energy, and the band-to-band transition ampli-tude. Through the comprehensive studies on both the theoretical calculation and the experimental evaluation of the energy band profile, we found out that the localized state, which is separated above by ~0.07 eV from the first excited hole-subband, corresponds to the deep-level state, residing at the position of ~0.75 eV far below the conduction band (i.e., near the valence band edge).

Original languageEnglish
Article number585
Pages (from-to)1-8
Number of pages8
JournalNanomaterials
Volume11
Issue number3
DOIs
StatePublished - 2021

Keywords

  • Deep level transient spectroscopy
  • Fermi-edge singularity
  • InAlAs/InGaAs heterostructure
  • Photoluminescence

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