TY - JOUR
T1 - Correlation of electrical properties with magnetic properties for ferromagnetic (Ga1-xMnx)As epilayer
AU - Lee, Sejoon
AU - Kim, Deuk Young
PY - 2007/2
Y1 - 2007/2
N2 - The correlation of electrical properties with magnetic properties for the (Ga1-xMnx)As epilayer was investigated. For electrical transport measurements, it was clearly observed that the electrical mobility is increased with decreasing temperatures for both the (Ga0.974Mn0.026)As/LT-GaAs epilayer and the LT-GaAs:Be epilayer. However, a different behavior was observed at the cryogenic temperature region. The electrical mobility of (Ga0.974Mn0.026)As/LT-GaAs epilayer increases with decreasing temperature, while the mobility of LT-GaAs:Be epilayer decreases with decreasing temperature. In Arrhenius plots of carrier mobility for the (Ga0.974Mn0.026)As/LT-GaAs epilayer, the critical point is observed at 69 K, and this value is almost the same as the TC. This result indicates that the carrier transport in ferromagnetic (Ga1-xMnx)As epilayers might be related to a spin-ordering effect because the spins will be arranged with the same direction below the TC, and this will lead to reducing the probability of spin-disorder scattering. Therefore, the observation of a gradual drop below the TC in the temperature-dependent resistivity curve is expected to be a result of the spin-ordering effect in the ferromagnetic (Ga0.974Mn0.026)As/LT-GaAs epilayer.
AB - The correlation of electrical properties with magnetic properties for the (Ga1-xMnx)As epilayer was investigated. For electrical transport measurements, it was clearly observed that the electrical mobility is increased with decreasing temperatures for both the (Ga0.974Mn0.026)As/LT-GaAs epilayer and the LT-GaAs:Be epilayer. However, a different behavior was observed at the cryogenic temperature region. The electrical mobility of (Ga0.974Mn0.026)As/LT-GaAs epilayer increases with decreasing temperature, while the mobility of LT-GaAs:Be epilayer decreases with decreasing temperature. In Arrhenius plots of carrier mobility for the (Ga0.974Mn0.026)As/LT-GaAs epilayer, the critical point is observed at 69 K, and this value is almost the same as the TC. This result indicates that the carrier transport in ferromagnetic (Ga1-xMnx)As epilayers might be related to a spin-ordering effect because the spins will be arranged with the same direction below the TC, and this will lead to reducing the probability of spin-disorder scattering. Therefore, the observation of a gradual drop below the TC in the temperature-dependent resistivity curve is expected to be a result of the spin-ordering effect in the ferromagnetic (Ga0.974Mn0.026)As/LT-GaAs epilayer.
KW - Diluted magnetic semiconductor
KW - Ferromagnetism
KW - GaMnAs
KW - Spin-disorder scattering
UR - http://www.scopus.com/inward/record.url?scp=33750705920&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2006.02.011
DO - 10.1016/j.cap.2006.02.011
M3 - Article
AN - SCOPUS:33750705920
SN - 1567-1739
VL - 7
SP - 156
EP - 159
JO - Current Applied Physics
JF - Current Applied Physics
IS - 2
ER -