Coulomb blockade and plasmonic nanoantenna effect in back gated ZnO nanorod FET

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Fabrication and characterization of ZnO nanorod field effect transistor (FET) is reported. Back-gated ZnO nanowire FETs were fabricated on SiO2 covered p-type Si substrate using lithographically patterned Ti/Au contacts. The ZnO nanorods were synthesized by chemical bath deposition method using the precursors zinc nitrate hexahydrate (Zn (NO3)2·6H2O) and hexamethylenetetramine (HMT) (C6H12N4). Fabricated FET has shown clear gate response. I-V characterization done on the fabricated FET has shown Coulomb blockade and plasmonic nanoantenna like effects. The observation of Coulomb blockade and plasmonic effect of the fabricated FET structure have been explained.

Original languageEnglish
Pages (from-to)5226-5229
Number of pages4
JournalOptik
Volume127
Issue number13
DOIs
StatePublished - 1 Jul 2016

Keywords

  • Coulomb bloackade
  • Lithography
  • Nanorod FET
  • Plasmonic nanoantenna
  • Solution synthesis
  • Ti/Au metal contacts
  • ZnO nanorod

Fingerprint

Dive into the research topics of 'Coulomb blockade and plasmonic nanoantenna effect in back gated ZnO nanorod FET'. Together they form a unique fingerprint.

Cite this