Coupled X-band double quantum wells under high hydrostatic pressures

Hyunsik Im

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

2D→2D tunneling in GaAs/AlAs "coupled X-band double quantum wells" with a thin GaAs X barrier has been investigated as a function of hydrostatic pressure up to 16 kbar at 4.2 K. Up to three X-band resonances, XXY(1)→XXY(n) where n=l, 2, and 3, were clearly observed. It was experimentally demonstrated that the triangular δ-barrier formed in the GaAs spacer layers beyond the type I - type II transition reduced the conductance of the XXY(1)→XXY(1) process at zero bias and led to shifts of the resonances to higher bias voltages. Quantitative self-consistent Schrödinger-Poisson analyses agreed very well with the experimental data.

Original languageEnglish
Pages (from-to)87-91
Number of pages5
JournalJournal of the Korean Physical Society
Volume41
Issue number1
StatePublished - Jul 2002

Keywords

  • Quantum beats
  • Resonant tunneling
  • X-electron

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