Abstract
2D→2D tunneling in GaAs/AlAs "coupled X-band double quantum wells" with a thin GaAs X barrier has been investigated as a function of hydrostatic pressure up to 16 kbar at 4.2 K. Up to three X-band resonances, XXY(1)→XXY(n) where n=l, 2, and 3, were clearly observed. It was experimentally demonstrated that the triangular δ-barrier formed in the GaAs spacer layers beyond the type I - type II transition reduced the conductance of the XXY(1)→XXY(1) process at zero bias and led to shifts of the resonances to higher bias voltages. Quantitative self-consistent Schrödinger-Poisson analyses agreed very well with the experimental data.
Original language | English |
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Pages (from-to) | 87-91 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 41 |
Issue number | 1 |
State | Published - Jul 2002 |
Keywords
- Quantum beats
- Resonant tunneling
- X-electron