@inproceedings{73d5384cfca348109a458b46edf25e42,
title = "Critical behavior of Ga 1-xMn xAs",
abstract = "The temperature dependencies of the resistivity, the magnetization, the specific heat and the thermal diffusivity have been conducted in the close vicinity of magnetic phase transition in Ga 1-xMn xAs. Two different types of Ga 1-xMn xAs samples have been investigated. The sample with a Mn concentration of 1.6% shows an insulating behavior and the sample with a Mn concentration of 2.6% is metallic. From the M(T) and M(H) curves by using Arrott plots the Curie temperature and the critical exponents of β, γ, and δ have been determined. The temperature dependencies of the specific heat and thermal diffusivity of Ga 1-xMn xAs samples demonstrated a pronounced λ shaped peak, which indicates an existence of a second-order phase transition in these samples. The specific heat peak maximum is located near the Curie temperature and therefore, it is attributed to the ferromagnetic-paramagnetic phase transition. From detailed analysis of the specific heat and the thermal diffusivity data above and below T C, the value of critical exponent α has been determined. The critical behavior of the specific heat of Ga 1-xMn xAs samples is well described by the mean-field including Gaussian fluctuations model.",
keywords = "critical behavior, Ferromagnetic semiconductors",
author = "Yuldashev, {Sh U.} and Igamberdiev, {Kh T.} and Lee, {S. J.} and Kwon, {Y. H.} and Kang, {T. W.} and Yongmin Kim and Hyunsik Im and Shashkov, {A. G.}",
year = "2011",
doi = "10.1063/1.3666556",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "673--674",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}