TY - JOUR
T1 - Crystal growth via metal-organic vapor phase epitaxy of quantum-cascade-laser structures composed of multiple alloy compositions
AU - Shin, Jae Cheol
AU - Mawst, Luke J.
AU - Botez, Dan
PY - 2012/10/15
Y1 - 2012/10/15
N2 - Metal-organic vapor phase epitaxy (MOVPE) is suitable for the growth of superlattice (SL) structures composed of multiple alloy compositions. By taking advantage of this flexibility of MOVPE, we have demonstrated the crystal growth of varying-layer-composition, 4.8 μm-emitting, tapered active-region quantum cascade lasers (TA-QCLs), for which the barriers in the active region gradually increase in height from the injection barrier to the exit barrier, resulting, in turn, in a dramatic suppression of carrier leakage. One stage of the TA-QCL structure consists of seven different alloy compositions. The composition and growth rate of each layer are calibrated by using high-resolution X-ray-diffraction rocking curves. Very narrow mid-infrared absorption peaks (∼30 meV full width at half-maximum) have been achieved, at room temperature, from 20 periods of In 0.6Ga 0.4As/Al 0.56In 0.44As SL structures, at the designed wavelength. Transmission-electron-microscope analysis of the QCL structure confirms extremely accurate thickness control and layer uniformity for layers as thin as 1 nm.
AB - Metal-organic vapor phase epitaxy (MOVPE) is suitable for the growth of superlattice (SL) structures composed of multiple alloy compositions. By taking advantage of this flexibility of MOVPE, we have demonstrated the crystal growth of varying-layer-composition, 4.8 μm-emitting, tapered active-region quantum cascade lasers (TA-QCLs), for which the barriers in the active region gradually increase in height from the injection barrier to the exit barrier, resulting, in turn, in a dramatic suppression of carrier leakage. One stage of the TA-QCL structure consists of seven different alloy compositions. The composition and growth rate of each layer are calibrated by using high-resolution X-ray-diffraction rocking curves. Very narrow mid-infrared absorption peaks (∼30 meV full width at half-maximum) have been achieved, at room temperature, from 20 periods of In 0.6Ga 0.4As/Al 0.56In 0.44As SL structures, at the designed wavelength. Transmission-electron-microscope analysis of the QCL structure confirms extremely accurate thickness control and layer uniformity for layers as thin as 1 nm.
KW - A3. Metal-organic vapor phase epitaxy
KW - A3. Superlattices
KW - B2. Semiconducting III-V materials
KW - B3. Solid state lasers
UR - http://www.scopus.com/inward/record.url?scp=84864800535&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2012.07.013
DO - 10.1016/j.jcrysgro.2012.07.013
M3 - Article
AN - SCOPUS:84864800535
SN - 0022-0248
VL - 357
SP - 15
EP - 19
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -