Crystal structures of hexagonal MnAs ferromagnetic epilayers grown on GaAs (1 0 0) substrates

T. W. Kim; H. S. Lee; J. Y. Lee; H. C. Jeon; T. W. Kang

doi:10.1016/j.jcrysgro.2006.02.058

Crystal structures of hexagonal MnAs ferromagnetic epilayers grown on GaAs (1 0 0) substrates

T. W. Kim
, H. S. Lee
, J. Y. Lee
, H. C. Jeon
, T. W. Kang

Quantum-Functional Semiconductor Research Center

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Hexagonal MnAs thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy. The magnetization curve as a function of the magnetic field at 5 K showed that the MnAs thin films were ferromagnetic, and the magnetization curve as a function of the temperature revealed that the ferromagnetic transition temperature was as high as 318 K. The selected-area electron-diffraction pattern (SADP) and the high-resolution transmission electron microscopy (HRTEM) measurements on the MnAs/GaAs heterostructure showed that the hexagonal MnAs layer was grown pseudomorphically on the GaAs substrate. Based on the SADP and HRTEM results, a possible crystal structure for the MnAs/GaAs heterostructure is presented.

Original language	English
Pages (from-to)	62-66
Number of pages	5
Journal	Journal of Crystal Growth
Volume	292
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.02.058
State	Published - 15 Jun 2006

Keywords

A1. Crystal structure
A3. Molecular beam epitaxy
B2. Magnetic materials

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10.1016/j.jcrysgro.2006.02.058

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title = "Crystal structures of hexagonal MnAs ferromagnetic epilayers grown on GaAs (1 0 0) substrates",

abstract = "Hexagonal MnAs thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy. The magnetization curve as a function of the magnetic field at 5 K showed that the MnAs thin films were ferromagnetic, and the magnetization curve as a function of the temperature revealed that the ferromagnetic transition temperature was as high as 318 K. The selected-area electron-diffraction pattern (SADP) and the high-resolution transmission electron microscopy (HRTEM) measurements on the MnAs/GaAs heterostructure showed that the hexagonal MnAs layer was grown pseudomorphically on the GaAs substrate. Based on the SADP and HRTEM results, a possible crystal structure for the MnAs/GaAs heterostructure is presented.",

keywords = "A1. Crystal structure, A3. Molecular beam epitaxy, B2. Magnetic materials",

author = "Kim, \{T. W.\} and Lee, \{H. S.\} and Lee, \{J. Y.\} and Jeon, \{H. C.\} and Kang, \{T. W.\}",

year = "2006",

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doi = "10.1016/j.jcrysgro.2006.02.058",

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TY - JOUR

T1 - Crystal structures of hexagonal MnAs ferromagnetic epilayers grown on GaAs (1 0 0) substrates

AU - Kim, T. W.

AU - Lee, H. S.

AU - Lee, J. Y.

AU - Jeon, H. C.

AU - Kang, T. W.

PY - 2006/6/15

Y1 - 2006/6/15

N2 - Hexagonal MnAs thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy. The magnetization curve as a function of the magnetic field at 5 K showed that the MnAs thin films were ferromagnetic, and the magnetization curve as a function of the temperature revealed that the ferromagnetic transition temperature was as high as 318 K. The selected-area electron-diffraction pattern (SADP) and the high-resolution transmission electron microscopy (HRTEM) measurements on the MnAs/GaAs heterostructure showed that the hexagonal MnAs layer was grown pseudomorphically on the GaAs substrate. Based on the SADP and HRTEM results, a possible crystal structure for the MnAs/GaAs heterostructure is presented.

AB - Hexagonal MnAs thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy. The magnetization curve as a function of the magnetic field at 5 K showed that the MnAs thin films were ferromagnetic, and the magnetization curve as a function of the temperature revealed that the ferromagnetic transition temperature was as high as 318 K. The selected-area electron-diffraction pattern (SADP) and the high-resolution transmission electron microscopy (HRTEM) measurements on the MnAs/GaAs heterostructure showed that the hexagonal MnAs layer was grown pseudomorphically on the GaAs substrate. Based on the SADP and HRTEM results, a possible crystal structure for the MnAs/GaAs heterostructure is presented.

KW - A1. Crystal structure

KW - A3. Molecular beam epitaxy

KW - B2. Magnetic materials

UR - https://www.scopus.com/pages/publications/33745684914

U2 - 10.1016/j.jcrysgro.2006.02.058

DO - 10.1016/j.jcrysgro.2006.02.058

M3 - Article

AN - SCOPUS:33745684914

SN - 0022-0248

VL - 292

SP - 62

EP - 66

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Crystal structures of hexagonal MnAs ferromagnetic epilayers grown on GaAs (1 0 0) substrates

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Keywords

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