DC characteristics of AlGaN/GaN HEMTs using a dual-gate structure

Sejun Hong, Abu Ul Hassan Sarwar Rana, Jun Woo Heo, Hyun Seok Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

Original languageEnglish
Pages (from-to)7467-7471
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume15
Issue number10
DOIs
StatePublished - Oct 2015

Keywords

  • Breakdown voltage
  • Drain current
  • Dual gate
  • GaN
  • High-electron-mobility transistor (HEMT)
  • Threshold voltage
  • Two-dimensional electron gas (2-DEG)

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