TY - JOUR
T1 - DC characteristics of AlGaN/GaN HEMTs using a dual-gate structure
AU - Hong, Sejun
AU - Rana, Abu Ul Hassan Sarwar
AU - Heo, Jun Woo
AU - Kim, Hyun Seok
N1 - Publisher Copyright:
Copyright © 2015 American Scientific Publishers All rights reserved.
PY - 2015/10
Y1 - 2015/10
N2 - Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.
AB - Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.
KW - Breakdown voltage
KW - Drain current
KW - Dual gate
KW - GaN
KW - High-electron-mobility transistor (HEMT)
KW - Threshold voltage
KW - Two-dimensional electron gas (2-DEG)
UR - http://www.scopus.com/inward/record.url?scp=84947239812&partnerID=8YFLogxK
U2 - 10.1166/jnn.2015.11135
DO - 10.1166/jnn.2015.11135
M3 - Article
AN - SCOPUS:84947239812
SN - 1533-4880
VL - 15
SP - 7467
EP - 7471
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
IS - 10
ER -