Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

Chan Jin Park; Young Shin Park; Ho Sang Lee; Im Taek Yoon; Tae Won Kang; Hoon Young Cho; Jae Eung Oh; Kang L. Wang

doi:10.1143/JJAP.44.1722

Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

Chan Jin Park, Young Shin Park, Ho Sang Lee, Im Taek Yoon, Tae Won Kang, Hoon Young Cho, Jae Eung Oh, Kang L. Wang

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0 × 10^-15 cm² and 7.4 × 10^-17 cm², respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.

Original language	English
Pages (from-to)	1722-1725
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.44.1722
State	Published - Apr 2005

Keywords

Aluminum compounds
Capacitance-voltage characteristics
Deep level transient spectroscopy
Deep-levels
Defect states
Gallium compounds
Molecular-beam epitaxial growth
Wide-band-gap semiconductors

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10.1143/JJAP.44.1722

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title = "Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy",

abstract = "Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0 × 10-15 cm2 and 7.4 × 10-17 cm2, respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.",

keywords = "Aluminum compounds, Capacitance-voltage characteristics, Deep level transient spectroscopy, Deep-levels, Defect states, Gallium compounds, Molecular-beam epitaxial growth, Wide-band-gap semiconductors",

author = "Park, {Chan Jin} and Park, {Young Shin} and Lee, {Ho Sang} and Yoon, {Im Taek} and Kang, {Tae Won} and Cho, {Hoon Young} and Oh, {Jae Eung} and Wang, {Kang L.}",

year = "2005",

month = apr,

doi = "10.1143/JJAP.44.1722",

language = "English",

volume = "44",

pages = "1722--1725",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

AU - Park, Chan Jin

AU - Park, Young Shin

AU - Lee, Ho Sang

AU - Yoon, Im Taek

AU - Kang, Tae Won

AU - Cho, Hoon Young

AU - Oh, Jae Eung

AU - Wang, Kang L.

PY - 2005/4

Y1 - 2005/4

N2 - Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0 × 10-15 cm2 and 7.4 × 10-17 cm2, respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.

AB - Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of 5.0 × 10-15 cm2 and 7.4 × 10-17 cm2, respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.

KW - Aluminum compounds

KW - Capacitance-voltage characteristics

KW - Deep level transient spectroscopy

KW - Deep-levels

KW - Defect states

KW - Gallium compounds

KW - Molecular-beam epitaxial growth

KW - Wide-band-gap semiconductors

UR - http://www.scopus.com/inward/record.url?scp=21244439112&partnerID=8YFLogxK

U2 - 10.1143/JJAP.44.1722

DO - 10.1143/JJAP.44.1722

M3 - Article

AN - SCOPUS:21244439112

SN - 0021-4922

VL - 44

SP - 1722

EP - 1725

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 A

ER -

Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

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