@inproceedings{1fdd530988554c35b5d32f579896216c,
title = "Deep level defects in AlxGa1-xN/GaN heterointerfaces grown by molecular beam epitaxy",
abstract = "Capacitance-voltage (C-V) and Deep-level transient spectroscopy (DLTS) measurements on AlxGa1-xN/GaN heterostructures were performed to investigate the existence of the carriers and the behavior of the deep levels in the AlxGa1-xN/GaN heterointerface. The C-V depth profile showed that the carrier concentration existed at the Al xGa1-xN/GaN heterointerface was 4 × 1012 cm2. The DLTS results showed two deep levels. The capture cross-section of the deep level related to the two-dimensional electron gas decreased with increasing depth, resulting from the existence of the different deep levels in each region.",
keywords = "Deep levels, Two-dimensional electron gas region",
author = "Jeon, {Hee Chang} and Park, {Chan Jin} and Cho, {Hoon Young} and Kang, {Tae Won} and Kim, {Tae Whan} and Oh, {Jae Eung}",
year = "2007",
doi = "10.4028/3-908451-31-0.89",
language = "English",
isbn = "3908451310",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
number = "PART 1",
pages = "89--92",
booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",
address = "Switzerland",
edition = "PART 1",
note = "IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 ; Conference date: 10-09-2006 Through 14-09-2006",
}