Deep level defects in porous silicon

W. H. Lee, C. Lee, Y. H. Kwon, C. Y. Hong, H. Y. Cho

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

This paper reports on the existence of deep level defects in the band gap of porous silicon by the photo-induced current transient spectroscopy technique combined with the results of thermovoltage and conductivity measurements. The defects are found to exhibit deep donor levels in the upper part of the band gap. It is found that the thermal emission and ionization energies of the defect increase in the range from 0.29 to 0.86 eV below the conduction band edge as the porosity increases, and it is proposed that the defects play the role of a luminescence killer.

Original languageEnglish
Pages (from-to)519-522
Number of pages4
JournalSolid State Communications
Volume113
Issue number9
DOIs
StatePublished - 8 Feb 2000

Fingerprint

Dive into the research topics of 'Deep level defects in porous silicon'. Together they form a unique fingerprint.

Cite this