Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2 Ga0.8N/GaN interface and the rapid thermal annealing effect

Young S. Park, Minyoung Lee, Kiyoung Jeon, Im T. Yoon, Yoon Shon, Hyunsik Im, C. J. Park, Hoon Y. Cho, Myung Soo Han

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Abstract

We investigated deep-level traps formed in Al0.2 Ga0.8 N/GaN heterostructures grown using plasma-assisted molecular beam epitaxy and by performing deep level transient spectroscopy (DLTS). Two electron traps with activation energies of Ec-150 meV and Ec-250 meV were observed, and their capture cross-sections (σT) were estimated to be 2.0× 10-18 cm2 and 1.1× 10-17 cm2, respectively. Different behaviors in the dependence of DLTS on filling pulse length confirm that the traps originated from N vacancies and dislocations. The amplitude of the dislocation-induced DLTS signal was reduced significantly by high-temperature rapid thermal annealing under N2 ambient after hydrogen treatment due to the reduction in dislocation density.

Original languageEnglish
Article number112110
JournalApplied Physics Letters
Volume97
Issue number11
DOIs
StatePublished - 13 Sep 2010

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