Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2 Ga0.8N/GaN interface and the rapid thermal annealing effect

Young S. Park; Minyoung Lee; Kiyoung Jeon; Im T. Yoon; Yoon Shon; Hyunsik Im; C. J. Park; Hoon Y. Cho; Myung Soo Han

doi:10.1063/1.3491798

Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.₂ Ga_0.8N/GaN interface and the rapid thermal annealing effect

Young S. Park
, Minyoung Lee
, Kiyoung Jeon
, Im T. Yoon
, Yoon Shon
, Hyunsik Im
, C. J. Park
, Hoon Y. Cho
, Myung Soo Han

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We investigated deep-level traps formed in Al0.2 Ga0.8 N/GaN heterostructures grown using plasma-assisted molecular beam epitaxy and by performing deep level transient spectroscopy (DLTS). Two electron traps with activation energies of Ec_-150 meV and Ec_-250 meV were observed, and their capture cross-sections (σ_T) were estimated to be 2.0× 10^-18 cm² and 1.1× 10^-17 cm², respectively. Different behaviors in the dependence of DLTS on filling pulse length confirm that the traps originated from N vacancies and dislocations. The amplitude of the dislocation-induced DLTS signal was reduced significantly by high-temperature rapid thermal annealing under N₂ ambient after hydrogen treatment due to the reduction in dislocation density.

Original language	English
Article number	112110
Journal	Applied Physics Letters
Volume	97
Issue number	11
DOIs	https://doi.org/10.1063/1.3491798
State	Published - 13 Sep 2010

Access to Document

10.1063/1.3491798

Cite this

@article{065e31f401714255a82abb927a56a94c,

title = "Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2 Ga0.8N/GaN interface and the rapid thermal annealing effect",

abstract = "We investigated deep-level traps formed in Al0.2 Ga0.8 N/GaN heterostructures grown using plasma-assisted molecular beam epitaxy and by performing deep level transient spectroscopy (DLTS). Two electron traps with activation energies of Ec-150 meV and Ec-250 meV were observed, and their capture cross-sections (σT) were estimated to be 2.0× 10-18 cm2 and 1.1× 10-17 cm2, respectively. Different behaviors in the dependence of DLTS on filling pulse length confirm that the traps originated from N vacancies and dislocations. The amplitude of the dislocation-induced DLTS signal was reduced significantly by high-temperature rapid thermal annealing under N2 ambient after hydrogen treatment due to the reduction in dislocation density.",

author = "Park, \{Young S.\} and Minyoung Lee and Kiyoung Jeon and Yoon, \{Im T.\} and Yoon Shon and Hyunsik Im and Park, \{C. J.\} and Cho, \{Hoon Y.\} and Han, \{Myung Soo\}",

year = "2010",

month = sep,

day = "13",

doi = "10.1063/1.3491798",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2 Ga0.8N/GaN interface and the rapid thermal annealing effect

AU - Park, Young S.

AU - Lee, Minyoung

AU - Jeon, Kiyoung

AU - Yoon, Im T.

AU - Shon, Yoon

AU - Im, Hyunsik

AU - Park, C. J.

AU - Cho, Hoon Y.

AU - Han, Myung Soo

PY - 2010/9/13

Y1 - 2010/9/13

N2 - We investigated deep-level traps formed in Al0.2 Ga0.8 N/GaN heterostructures grown using plasma-assisted molecular beam epitaxy and by performing deep level transient spectroscopy (DLTS). Two electron traps with activation energies of Ec-150 meV and Ec-250 meV were observed, and their capture cross-sections (σT) were estimated to be 2.0× 10-18 cm2 and 1.1× 10-17 cm2, respectively. Different behaviors in the dependence of DLTS on filling pulse length confirm that the traps originated from N vacancies and dislocations. The amplitude of the dislocation-induced DLTS signal was reduced significantly by high-temperature rapid thermal annealing under N2 ambient after hydrogen treatment due to the reduction in dislocation density.

AB - We investigated deep-level traps formed in Al0.2 Ga0.8 N/GaN heterostructures grown using plasma-assisted molecular beam epitaxy and by performing deep level transient spectroscopy (DLTS). Two electron traps with activation energies of Ec-150 meV and Ec-250 meV were observed, and their capture cross-sections (σT) were estimated to be 2.0× 10-18 cm2 and 1.1× 10-17 cm2, respectively. Different behaviors in the dependence of DLTS on filling pulse length confirm that the traps originated from N vacancies and dislocations. The amplitude of the dislocation-induced DLTS signal was reduced significantly by high-temperature rapid thermal annealing under N2 ambient after hydrogen treatment due to the reduction in dislocation density.

UR - https://www.scopus.com/pages/publications/77956839034

U2 - 10.1063/1.3491798

DO - 10.1063/1.3491798

M3 - Article

AN - SCOPUS:77956839034

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112110

ER -

Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.₂ Ga_0.8N/GaN interface and the rapid thermal annealing effect

Abstract

Access to Document

Other files and links

Fingerprint

Cite this