Abstract
Deep levels and electrical properties in Si- and Be-coimplanted semi-insulating GaAs, grown by liquid-encapsulated Czochralski methods, were investigated. The Si implantation with a dose of 8×1012 ions cm-2 and energy of 65 keV was performed into GaAs already implanted with a Be dose of 2×1012 cm-2 and 90 keV for the purpose of an abrupt implant profile in a deeper region. During the Be coimplantation, an electron deep level at 0.62 eV below the conduction band and a hole deep level at 0.68 eV above the valence band were newly observed. In the Be-implanted region of ion-implanted GaAs, the deep levels Ec - 0.62 eV and Ev + 0.68 eV dominate, but are not found in the bulk. From this work, it is suggested that the Ec - 0.62 eV trap could be the defect due to the implantation damage and that the Ev + 0.68 eV trap could be the Be complex related to a Si dose during the implantation.
Original language | English |
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Pages (from-to) | 661-664 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 70 |
Issue number | 2 |
DOIs | |
State | Published - 1991 |