TY - JOUR
T1 - Defect analysis and performance evaluation of p-type epitaxial GaAs layer on Ge substrate for GaAs/Ge based advanced device
AU - Dalapati, Goutam Kumar
AU - Suresh, Vignesh
AU - Chakraborty, Sandipan
AU - Mahata, Chandreswar
AU - Ren, Yi
AU - Bhat, Thirumaleshawara
AU - Tripathy, Sudhiranjan
AU - Lee, Taeyoon
AU - Bera, Lakshmi Kanta
AU - Chi, Dongzhi
N1 - Publisher Copyright:
© 2016 VBRI Press.
PY - 2016/7/1
Y1 - 2016/7/1
N2 - The structural defects and formation of native oxides during thermal treatment on p-type epitaxial-GaAs/Ge have been investigated using spectroscopic measurements and electrical characterization. The performance of epi-GaAs based device depends on the interface quality between epi-GaAs and gate oxide and structural quality of the epi-GaAs layer. P-type epitaxial-GaAs was grown on Ge substrate using MOCVD technique at 675°C. Defective surface native oxides of arsenic and gallium oxides are observed for as-grown epi-GaAs layer. The arsenic oxide significantly reduced after thermal treatment as seen from XPS observations. The structural defects at surface enhanced after thermal treatment which is clearly probed by micro-Raman spectroscopy. Atomic layer deposited (ALD) Al2O3 significantly improved the interface properties after thermal treatment compared with bare epi-GaAs layer. Even though, the interface trap defect density slightly higher for p-type epi-GaAs MOS capacitor compared with bulk p-type GaAs devices, high frequency-dispersion in epi-GaAs based devices observed. This is mainly governs through the formation of p-i-n junction diode in the epi-GaAs layer on Ge substrates.
AB - The structural defects and formation of native oxides during thermal treatment on p-type epitaxial-GaAs/Ge have been investigated using spectroscopic measurements and electrical characterization. The performance of epi-GaAs based device depends on the interface quality between epi-GaAs and gate oxide and structural quality of the epi-GaAs layer. P-type epitaxial-GaAs was grown on Ge substrate using MOCVD technique at 675°C. Defective surface native oxides of arsenic and gallium oxides are observed for as-grown epi-GaAs layer. The arsenic oxide significantly reduced after thermal treatment as seen from XPS observations. The structural defects at surface enhanced after thermal treatment which is clearly probed by micro-Raman spectroscopy. Atomic layer deposited (ALD) Al2O3 significantly improved the interface properties after thermal treatment compared with bare epi-GaAs layer. Even though, the interface trap defect density slightly higher for p-type epi-GaAs MOS capacitor compared with bulk p-type GaAs devices, high frequency-dispersion in epi-GaAs based devices observed. This is mainly governs through the formation of p-i-n junction diode in the epi-GaAs layer on Ge substrates.
KW - GaAs
KW - GaAs/Ge integration
KW - Native oxides
KW - Raman spectroscopy
KW - Rapid thermal annealing
UR - http://www.scopus.com/inward/record.url?scp=84982124181&partnerID=8YFLogxK
U2 - 10.5185/amlett.2016.6439
DO - 10.5185/amlett.2016.6439
M3 - Article
AN - SCOPUS:84982124181
SN - 0976-3961
VL - 7
SP - 517
EP - 524
JO - Advanced Materials Letters
JF - Advanced Materials Letters
IS - 7
ER -