@inproceedings{8431589028054d34b145ac612279df5e,
title = "Defect control in zinc oxynitride semiconductor for high-performance and high-stability thin-film transistors",
abstract = "The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compound is presented. It is demonstrated that the addition of appropriate dopant, gallium, in ZnON, suppresses the formation of shallow donor, nitrogen vacancies, and significantly improves electrical characteristics of the resulting TFT. The Ga:ZnON devices with field-effect mobility values exceeding 50 cm2/Vs are achieved, which makes them suitable as switching or driving elements in next-generation flat-panel displays.",
keywords = "First-principles calculation, Flat panel display, Oxynitride, TFT",
author = "Kim, {Hyun Suk} and Park, {Joon Seok} and Kim, {Tae Sang} and Son, {Kyoung Seok} and Seon, {Jong Baek} and Seo, {Seok Jun} and Kim, {Sun Jae} and Lee, {Sun Hee} and Kim, {Eok Su} and Ryu, {Myoung Kwan} and Han, {Seung Wu} and Cho, {Seong Ho} and Park, {Young Soo}",
year = "2014",
doi = "10.4028/www.scientific.net/SSP.205-206.446",
language = "English",
isbn = "9783037858240",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "446--450",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XV",
address = "Switzerland",
note = "15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 ; Conference date: 22-09-2013 Through 27-09-2013",
}