Degradation behavior of TaYOx-based metal-insulator-metal capacitors

M. K. Hota, C. Mahata, S. Mallik, C. K. Sarkar, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Characteristics under constant voltage stress from 5 V to 7 V were carried out to monitor the degradation behavior of TaYOx dielectric layers. It is found that capacitance and the voltage at maximum capacitance gradually increase during constant voltage stressing. However, the leakage current density remains almost constant with the injected charge for a certain period of time.

Original languageEnglish
Title of host publicationIPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits
DOIs
StatePublished - 2010
Event17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010 - Singapore, Singapore
Duration: 5 Jul 20109 Jul 2010

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010
Country/TerritorySingapore
CitySingapore
Period5/07/109/07/10

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