Demonstration of bipolar resistance switching characteristics of sol-gel derived BaO_x resistive memory

Resistance switching (RS) characteristics of Ba-related compounds such as BaTiO_x and BaZrO_x have been widely reported in literature. However, resistive random-access memory (RRAM) fabricated using a BaO_x film as an RS layer is still unexplored. In this article, we use a sol-gel derived BaO_x RS layer to realize a Cu/BaO_x/n⁺-Si bipolar RRAM. The RS behavior is highly sensitive to annealing temperature of the BaO_x film. The as-fabricated BaO_x device shows a superior insulation property with a breakdown voltage of ∼45 V, and RS behavior is not observed. Nevertheless, for the device fabricated using 300 °C-annealed BaO_x film as the RS layer, significant bipolar RS feature with write and erase voltages of 4.8 and −1.58 V can be obtained. In addition, the RRAM exhibits a memory window of 10⁶, which is larger than those of bipolar RRAMs reported recently. Resistance switching mechanism and carrier transport behavior are investigated and evidenced by I-V measurement, curve analysis, and material analyses. Stability and read-disturb immunity at 25 and 85 °C are examined. Erase and write speeds are also explored.