Dependence of gas pressure on Cr Oxide thin film growth using a plasma focus device

Kyooho Jung, Jae Kap Lee, Hyunsik Im, L. Karpinski, M. Scholz, Jeon Kook Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mather-typed plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed freer grain structure at lower pressure.

Original languageEnglish
Pages (from-to)308-312
Number of pages5
JournalKorean Journal of Materials Research
Volume17
Issue number6
DOIs
StatePublished - Jun 2007

Keywords

  • Cr oxide thin film
  • Deposition
  • Ion emission
  • Plasma focus
  • Working pressure

Fingerprint

Dive into the research topics of 'Dependence of gas pressure on Cr Oxide thin film growth using a plasma focus device'. Together they form a unique fingerprint.

Cite this