Abstract
We fabricated the bottom-contacted ZnO/Pt Schottky diode and investigated the dependence of its photocurrent on the wavelength of illuminated ultraviolet (UV) light source. The bottom-contacted Schottky diode was devised by growing (000l) ZnO on (111) Pt, and the fabricated device showed a strong dependence on the UV wavelength for its photo-response characteristics. When longer-wavelength-UV (e.g., UV-A) was illuminated on the device, the photo-current was increased by a factor of 200, compared to that under illumination of shorter-wavelength-UV (e.g., UV-C). The behavior is attributed to the wavelength-dependent UV penetration depth for ZnO.
Original language | English |
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Pages (from-to) | 29-33 |
Number of pages | 5 |
Journal | Current Applied Physics |
Volume | 15 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2015 |
Keywords
- Bottom-contact
- Platinum
- Schottky diode
- UV response
- Zinc oxide