Dependence of resistive switching behaviors on oxygen content of the Pt/TiO2-x/Pt matrix

Yoon Cheol Bae, Ah Rahm Lee, June Sik Kwak, Hyunsik Im, Jin Pyo Hong

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

The resistive switching characteristics of poly-crystal rutile TiO 2-x thin film between Pt electrodes with different oxygen contents were studied. Current level analyses and dielectric material analyses of TiO2-x, X-ray diffraction, atomic force microscopy, and Rutherford backscattering spectrometry were performed to explain the possible nature of the stable resistive switching phenomenon at specific oxygen contents, along with impedance spectroscopy analysis. The experimental observations demonstrate that the distributions of the set/reset voltage and on/off current level strongly depend on the oxygen content of the TiO2-x layer.

Original languageEnglish
Pages (from-to)e66-e69
JournalCurrent Applied Physics
Volume11
Issue number2 SUPPL.
DOIs
StatePublished - Mar 2011

Keywords

  • Nonvolatile memory
  • ReRAM
  • Resistive switching

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