Dependence of resistive switching behaviors on oxygen content of the Pt/TiO_2-x/Pt matrix

Engineering

• Resistive 100%
• Oxygen Content 100%
• Thin Films 25%
• Ray Diffraction 25%
• Dielectrics 25%
• Atomic Force Microscopy 25%
• Experimental Observation 25%
• Pt Electrode 25%

Material Science

• Titanium Dioxide 100%
• Thin Films 33%
• Dielectric Spectroscopy 33%
• X-Ray Diffraction 33%
• Titanium Oxide 33%
• Dielectric Material 33%
• Rutherford Backscattering Spectrometry 33%

Physics

• Resistive Switching 100%
• X Ray Diffraction 33%
• Thin Films 33%
• Atomic Force Microscopy 33%
• Dielectric Material 33%
• Backscattering 33%